New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis (MOS capacitors)

An analytical model with no free parameters has been developed which accurately describes thermally-stimulated-current (TSC) measurements spanning more than a factor of 50 in average heating rate. The model incorporates Schottky electric-field-induced barrier lowering and a temperature-dependent �...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on nuclear science 1992-12, Vol.39 (6), p.2192-2203
Hauptverfasser:	Fleetwood, D.M., Miller, S.L., Reber, R.A., McWhorter, P.J., Winokur, P.S., Shaneyfelt, M.R., Schwank, J.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Applied sciences Capacitance measurement Capacitance-voltage characteristics Charge carrier processes Charge measurement Current measurement Electron traps Electronics Energy measurement Exact sciences and technology Testing, measurement, noise and reliability Thermal factors Tunneling
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!