New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis (MOS capacitors)
An analytical model with no free parameters has been developed which accurately describes thermally-stimulated-current (TSC) measurements spanning more than a factor of 50 in average heating rate. The model incorporates Schottky electric-field-induced barrier lowering and a temperature-dependent �...
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| Veröffentlicht in: | IEEE transactions on nuclear science 1992-12, Vol.39 (6), p.2192-2203 |
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| container_end_page | 2203 |
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| container_issue | 6 |
| container_start_page | 2192 |
| container_title | IEEE transactions on nuclear science |
| container_volume | 39 |
| creator | Fleetwood, D.M. Miller, S.L. Reber, R.A. McWhorter, P.J. Winokur, P.S. Shaneyfelt, M.R. Schwank, J.R. |
| description | An analytical model with no free parameters has been developed which accurately describes thermally-stimulated-current (TSC) measurements spanning more than a factor of 50 in average heating rate. The model incorporates Schottky electric-field-induced barrier lowering and a temperature-dependent 'attempt-to-escape frequency' equal to approximately 10/sup 14/ Hz at 300 degrees C. Applying this model to TSC measurements provides significantly improved estimates of the energy distribution of trapped holes in irradiated SiO/sub 2/. All devices examined, including soft and (wet and dry) hard oxides from five process technologies, show similar energy distributions, with a minor peak at approximately 1.2 eV and a broad major peak centered approximately 1.7-2.0 eV above the SiO/sub 2/ valance band. It is found that the trapped-electron density in irradiated SiO/sub 2/ is proportional to the trapped-hole density over a wide range of irradiation conditions.< > |
| doi_str_mv | 10.1109/23.211421 |
| format | Article |
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The model incorporates Schottky electric-field-induced barrier lowering and a temperature-dependent 'attempt-to-escape frequency' equal to approximately 10/sup 14/ Hz at 300 degrees C. Applying this model to TSC measurements provides significantly improved estimates of the energy distribution of trapped holes in irradiated SiO/sub 2/. All devices examined, including soft and (wet and dry) hard oxides from five process technologies, show similar energy distributions, with a minor peak at approximately 1.2 eV and a broad major peak centered approximately 1.7-2.0 eV above the SiO/sub 2/ valance band. 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The model incorporates Schottky electric-field-induced barrier lowering and a temperature-dependent 'attempt-to-escape frequency' equal to approximately 10/sup 14/ Hz at 300 degrees C. Applying this model to TSC measurements provides significantly improved estimates of the energy distribution of trapped holes in irradiated SiO/sub 2/. All devices examined, including soft and (wet and dry) hard oxides from five process technologies, show similar energy distributions, with a minor peak at approximately 1.2 eV and a broad major peak centered approximately 1.7-2.0 eV above the SiO/sub 2/ valance band. It is found that the trapped-electron density in irradiated SiO/sub 2/ is proportional to the trapped-hole density over a wide range of irradiation conditions.< ></description><subject>Annealing</subject><subject>Applied sciences</subject><subject>Capacitance measurement</subject><subject>Capacitance-voltage characteristics</subject><subject>Charge carrier processes</subject><subject>Charge measurement</subject><subject>Current measurement</subject><subject>Electron traps</subject><subject>Electronics</subject><subject>Energy measurement</subject><subject>Exact sciences and technology</subject><subject>Testing, measurement, noise and reliability</subject><subject>Thermal factors</subject><subject>Tunneling</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNo9kL1PwzAQxS0EEqUwsDJ5YKCDi-3ETjyiii-p0AGYo6vtNEb5qGxH0J0_nFSpOpzeO93vnnSH0DWjc8aouufJnDOWcnaCJkyInDCR5adoQinLiUqVOkcXIXwPbSqomKC_d_uDXRvcpophMLHDHoyD6LqWuNb02hrc_TpjSfSwxboCv7E4Vr7rN9Wg1jdQ1zsSomv6GqI1RPfe2zbixkLovW32HlozFNS74AK-e1t9YA1b0C52Pswu0VkJdbBXB52ir6fHz8ULWa6eXxcPS6J5lkWi00RCLtfDgZKJVEmtmTQq4dKsS2WZoSbnTAttGIiEZorKlEsqJc04k1YmUzQbc7XvQvC2LLbeNeB3BaPF_n0FT4rxfQN7O7JbCBrq0kOrXTgupLlUivIBuxkxZ609Tg8Z_xgEeMo</recordid><startdate>19921201</startdate><enddate>19921201</enddate><creator>Fleetwood, D.M.</creator><creator>Miller, S.L.</creator><creator>Reber, R.A.</creator><creator>McWhorter, P.J.</creator><creator>Winokur, P.S.</creator><creator>Shaneyfelt, M.R.</creator><creator>Schwank, J.R.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19921201</creationdate><title>New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis (MOS capacitors)</title><author>Fleetwood, D.M. ; Miller, S.L. ; Reber, R.A. ; McWhorter, P.J. ; Winokur, P.S. ; Shaneyfelt, M.R. ; Schwank, J.R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c277t-c436a86b211615496cc16d9326dbf9e1d0d821c5cd1a530790642606607216e63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Annealing</topic><topic>Applied sciences</topic><topic>Capacitance measurement</topic><topic>Capacitance-voltage characteristics</topic><topic>Charge carrier processes</topic><topic>Charge measurement</topic><topic>Current measurement</topic><topic>Electron traps</topic><topic>Electronics</topic><topic>Energy measurement</topic><topic>Exact sciences and technology</topic><topic>Testing, measurement, noise and reliability</topic><topic>Thermal factors</topic><topic>Tunneling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fleetwood, D.M.</creatorcontrib><creatorcontrib>Miller, S.L.</creatorcontrib><creatorcontrib>Reber, R.A.</creatorcontrib><creatorcontrib>McWhorter, P.J.</creatorcontrib><creatorcontrib>Winokur, P.S.</creatorcontrib><creatorcontrib>Shaneyfelt, M.R.</creatorcontrib><creatorcontrib>Schwank, J.R.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fleetwood, D.M.</au><au>Miller, S.L.</au><au>Reber, R.A.</au><au>McWhorter, P.J.</au><au>Winokur, P.S.</au><au>Shaneyfelt, M.R.</au><au>Schwank, J.R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis (MOS capacitors)</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>1992-12-01</date><risdate>1992</risdate><volume>39</volume><issue>6</issue><spage>2192</spage><epage>2203</epage><pages>2192-2203</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>An analytical model with no free parameters has been developed which accurately describes thermally-stimulated-current (TSC) measurements spanning more than a factor of 50 in average heating rate. The model incorporates Schottky electric-field-induced barrier lowering and a temperature-dependent 'attempt-to-escape frequency' equal to approximately 10/sup 14/ Hz at 300 degrees C. Applying this model to TSC measurements provides significantly improved estimates of the energy distribution of trapped holes in irradiated SiO/sub 2/. All devices examined, including soft and (wet and dry) hard oxides from five process technologies, show similar energy distributions, with a minor peak at approximately 1.2 eV and a broad major peak centered approximately 1.7-2.0 eV above the SiO/sub 2/ valance band. It is found that the trapped-electron density in irradiated SiO/sub 2/ is proportional to the trapped-hole density over a wide range of irradiation conditions.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/23.211421</doi><tpages>12</tpages></addata></record> |
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| identifier | ISSN: 0018-9499 |
| ispartof | IEEE transactions on nuclear science, 1992-12, Vol.39 (6), p.2192-2203 |
| issn | 0018-9499 1558-1578 |
| language | eng |
| recordid | cdi_ieee_primary_211421 |
| source | IEEE Xplore |
| subjects | Annealing Applied sciences Capacitance measurement Capacitance-voltage characteristics Charge carrier processes Charge measurement Current measurement Electron traps Electronics Energy measurement Exact sciences and technology Testing, measurement, noise and reliability Thermal factors Tunneling |
| title | New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis (MOS capacitors) |
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