An in-process monitor for n-channel MOSFET hot carrier lifetimes

A rapid test that can detect changes in the hot carrier reliability of n-channel MOSFETs due to process induced damage to the oxide/interface was developed. The test consists of a short snapback stress phase, followed by a 5-s electron injection phase. Results are shown to be strongly correlated wit...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Mistry, K.R., Krakauer, D.B., Doyle, B.S., Spooner, T.A., Jackson, D.B.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Doping profiles Electrons Fabrication Hot carriers Life testing Monitoring MOSFET circuits Noise robustness Stress Structural engineering
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	121
container_issue
container_start_page	116
container_title
container_volume
creator	Mistry, K.R. Krakauer, D.B. Doyle, B.S. Spooner, T.A. Jackson, D.B.
description	A rapid test that can detect changes in the hot carrier reliability of n-channel MOSFETs due to process induced damage to the oxide/interface was developed. The test consists of a short snapback stress phase, followed by a 5-s electron injection phase. Results are shown to be strongly correlated with variations in hot carrier reliability due to oxide damage during upper-level processing steps. The test assumes that basic MOSFET structural parameters such as doping profiles and channel lengths do not vary significantly. This type of test is particularly useful as an inline monitor in wafer fabrication, enabling the rapid detection of process induced damage effects on hot carrier lifetime. The use of 1/f noise signals as a monitor for hot carrier resistance was also investigated. It was shown that the 1/f noise signal of an unstressed MOSFET was not correlated with its hot carrier robustness.< >
doi_str_mv	10.1109/RELPHY.1992.187634
format	Conference Proceeding
fullrecord	<record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_187634</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>187634</ieee_id><sourcerecordid>187634</sourcerecordid><originalsourceid>FETCH-LOGICAL-i172t-78e69b61a8dca60ff4e933897e14055ab0f3039059962385003b85773af4b5653</originalsourceid><addsrcrecordid>eNotj8tqwzAURAWl0JL6B7LSD9i98tVz1xDSpuCS0seiqyC7V0TFjyB507-vIR1mOJthYBhbC6iEAHf_tmte91-VcK6uhDUa5RUrnLGwGEEalDesyPkHFkkltBG37GEz8jiW5zR1lDMfpjHOU-JhyVh2Jz-O1POXw_vj7oOfppl3PqVIifcx0BwHynfsOvg-U_HPFftcutt92RyenrebpozC1HNpLGnXauHtd-c1hCDJIVpnSEhQyrcQENCBck7XaBUAtlYZgz7IVmmFK7a-7EYiOp5THHz6PV5u4h_zu0Z_</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>An in-process monitor for n-channel MOSFET hot carrier lifetimes</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Mistry, K.R. ; Krakauer, D.B. ; Doyle, B.S. ; Spooner, T.A. ; Jackson, D.B.</creator><creatorcontrib>Mistry, K.R. ; Krakauer, D.B. ; Doyle, B.S. ; Spooner, T.A. ; Jackson, D.B.</creatorcontrib><description>A rapid test that can detect changes in the hot carrier reliability of n-channel MOSFETs due to process induced damage to the oxide/interface was developed. The test consists of a short snapback stress phase, followed by a 5-s electron injection phase. Results are shown to be strongly correlated with variations in hot carrier reliability due to oxide damage during upper-level processing steps. The test assumes that basic MOSFET structural parameters such as doping profiles and channel lengths do not vary significantly. This type of test is particularly useful as an inline monitor in wafer fabrication, enabling the rapid detection of process induced damage effects on hot carrier lifetime. The use of 1/f noise signals as a monitor for hot carrier resistance was also investigated. It was shown that the 1/f noise signal of an unstressed MOSFET was not correlated with its hot carrier robustness.< ></description><identifier>ISBN: 9780780304734</identifier><identifier>ISBN: 078030473X</identifier><identifier>DOI: 10.1109/RELPHY.1992.187634</identifier><language>eng</language><publisher>IEEE</publisher><subject>Doping profiles ; Electrons ; Fabrication ; Hot carriers ; Life testing ; Monitoring ; MOSFET circuits ; Noise robustness ; Stress ; Structural engineering</subject><ispartof>30th Annual Proceedings Reliability Physics 1992, 1992, p.116-121</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/187634$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/187634$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Mistry, K.R.</creatorcontrib><creatorcontrib>Krakauer, D.B.</creatorcontrib><creatorcontrib>Doyle, B.S.</creatorcontrib><creatorcontrib>Spooner, T.A.</creatorcontrib><creatorcontrib>Jackson, D.B.</creatorcontrib><title>An in-process monitor for n-channel MOSFET hot carrier lifetimes</title><title>30th Annual Proceedings Reliability Physics 1992</title><addtitle>RELPHY</addtitle><description>A rapid test that can detect changes in the hot carrier reliability of n-channel MOSFETs due to process induced damage to the oxide/interface was developed. The test consists of a short snapback stress phase, followed by a 5-s electron injection phase. Results are shown to be strongly correlated with variations in hot carrier reliability due to oxide damage during upper-level processing steps. The test assumes that basic MOSFET structural parameters such as doping profiles and channel lengths do not vary significantly. This type of test is particularly useful as an inline monitor in wafer fabrication, enabling the rapid detection of process induced damage effects on hot carrier lifetime. The use of 1/f noise signals as a monitor for hot carrier resistance was also investigated. It was shown that the 1/f noise signal of an unstressed MOSFET was not correlated with its hot carrier robustness.< ></description><subject>Doping profiles</subject><subject>Electrons</subject><subject>Fabrication</subject><subject>Hot carriers</subject><subject>Life testing</subject><subject>Monitoring</subject><subject>MOSFET circuits</subject><subject>Noise robustness</subject><subject>Stress</subject><subject>Structural engineering</subject><isbn>9780780304734</isbn><isbn>078030473X</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1992</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8tqwzAURAWl0JL6B7LSD9i98tVz1xDSpuCS0seiqyC7V0TFjyB507-vIR1mOJthYBhbC6iEAHf_tmte91-VcK6uhDUa5RUrnLGwGEEalDesyPkHFkkltBG37GEz8jiW5zR1lDMfpjHOU-JhyVh2Jz-O1POXw_vj7oOfppl3PqVIifcx0BwHynfsOvg-U_HPFftcutt92RyenrebpozC1HNpLGnXauHtd-c1hCDJIVpnSEhQyrcQENCBck7XaBUAtlYZgz7IVmmFK7a-7EYiOp5THHz6PV5u4h_zu0Z_</recordid><startdate>1992</startdate><enddate>1992</enddate><creator>Mistry, K.R.</creator><creator>Krakauer, D.B.</creator><creator>Doyle, B.S.</creator><creator>Spooner, T.A.</creator><creator>Jackson, D.B.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1992</creationdate><title>An in-process monitor for n-channel MOSFET hot carrier lifetimes</title><author>Mistry, K.R. ; Krakauer, D.B. ; Doyle, B.S. ; Spooner, T.A. ; Jackson, D.B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-78e69b61a8dca60ff4e933897e14055ab0f3039059962385003b85773af4b5653</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Doping profiles</topic><topic>Electrons</topic><topic>Fabrication</topic><topic>Hot carriers</topic><topic>Life testing</topic><topic>Monitoring</topic><topic>MOSFET circuits</topic><topic>Noise robustness</topic><topic>Stress</topic><topic>Structural engineering</topic><toplevel>online_resources</toplevel><creatorcontrib>Mistry, K.R.</creatorcontrib><creatorcontrib>Krakauer, D.B.</creatorcontrib><creatorcontrib>Doyle, B.S.</creatorcontrib><creatorcontrib>Spooner, T.A.</creatorcontrib><creatorcontrib>Jackson, D.B.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mistry, K.R.</au><au>Krakauer, D.B.</au><au>Doyle, B.S.</au><au>Spooner, T.A.</au><au>Jackson, D.B.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>An in-process monitor for n-channel MOSFET hot carrier lifetimes</atitle><btitle>30th Annual Proceedings Reliability Physics 1992</btitle><stitle>RELPHY</stitle><date>1992</date><risdate>1992</risdate><spage>116</spage><epage>121</epage><pages>116-121</pages><isbn>9780780304734</isbn><isbn>078030473X</isbn><abstract>A rapid test that can detect changes in the hot carrier reliability of n-channel MOSFETs due to process induced damage to the oxide/interface was developed. The test consists of a short snapback stress phase, followed by a 5-s electron injection phase. Results are shown to be strongly correlated with variations in hot carrier reliability due to oxide damage during upper-level processing steps. The test assumes that basic MOSFET structural parameters such as doping profiles and channel lengths do not vary significantly. This type of test is particularly useful as an inline monitor in wafer fabrication, enabling the rapid detection of process induced damage effects on hot carrier lifetime. The use of 1/f noise signals as a monitor for hot carrier resistance was also investigated. It was shown that the 1/f noise signal of an unstressed MOSFET was not correlated with its hot carrier robustness.< ></abstract><pub>IEEE</pub><doi>10.1109/RELPHY.1992.187634</doi><tpages>6</tpages></addata></record>
fulltext	fulltext_linktorsrc
identifier	ISBN: 9780780304734
ispartof	30th Annual Proceedings Reliability Physics 1992, 1992, p.116-121
issn
language	eng
recordid	cdi_ieee_primary_187634
source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Doping profiles Electrons Fabrication Hot carriers Life testing Monitoring MOSFET circuits Noise robustness Stress Structural engineering
title	An in-process monitor for n-channel MOSFET hot carrier lifetimes
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T21%3A35%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=An%20in-process%20monitor%20for%20n-channel%20MOSFET%20hot%20carrier%20lifetimes&rft.btitle=30th%20Annual%20Proceedings%20Reliability%20Physics%201992&rft.au=Mistry,%20K.R.&rft.date=1992&rft.spage=116&rft.epage=121&rft.pages=116-121&rft.isbn=9780780304734&rft.isbn_list=078030473X&rft_id=info:doi/10.1109/RELPHY.1992.187634&rft_dat=%3Cieee_6IE%3E187634%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=187634&rfr_iscdi=true