High-speed, low-voltage complementary heterostructure FET circuit technology

A III-V complementary heterostructure FET circuit technology which offers high-speed at low supply voltages has been demonstrated. This circuit technology is based on the vertical integration of p-channel quantum-well FETs with n-channel FETs fabricated in the underlying layers of a single-growth AlGaAs-GaAs structure. Key features of the p-FET heterostructure design and fabrication technology are discussed, and results on the electrical characteristics and the performance of high-speed ring oscillator circuits are presented. Delays of 144 and 59 ps are obtained in 0.8 and 0.5 mu m gate-length circuits at a 1.25 V supply, which are the fastest speeds yet reported for room-temperature complementary heterostructure FET circuits at low supply voltages.< >