A New Operating Scheme by Switching the Polarity of Program/Erase Bias for Partially Oxidized Amorphous-Si-Based Charge-Trap Memory

In this brief, the authors propose a new program/erase (P/E) scheme for NAND-type partially oxidized amorphous-Si (a-Si)-based charge-trap memory in which the P/E voltages are interchanged into negative/positive ones, respectively. In the a-Si memory, the erasing speed was found to be faster than th...

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