Ion-Beam-Etched Profile Control of MTJ Cells for Improving the Switching Characteristics of High-Density MRAM

The effect of the reduction of the sidewall redeposition layer of magnetic materials is investigated for submicron-patterned magnetic random access memory (MRAM) cells. The sidewall redeposition layer is made at the first etch step of a magnetic tunnel junction (MTJ) with ion beam etching (IBE) in t...

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Veröffentlicht in:	IEEE transactions on magnetics 2006-10, Vol.42 (10), p.2745-2747
Hauptverfasser:	Takahashi, S., Kai, T., Shimomura, N., Ueda, T., Amano, M., Yoshikawa, M., Kitagawa, E., Asao, Y., Ikegawa, S., Kishi, T., Yoda, H., Nagahara, K., Mukai, T., Hada, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Arrays Cross-disciplinary physics: materials science rheology Equations Etching Exact sciences and technology Fluctuation Fluctuations Identity-based encryption Ion beam etching (IBE) Ion beams Magnetic materials magnetic random access memory (MRAM) magnetic tunnel junction (MTJ) Magnetic tunneling Magnetism Magnetoresistive random access memory Materials science Mathematical analysis Micromagnetics Other topics in materials science Physics Random access memory Simulation Switching Testing Tunnel junctions
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