Temperature Analysis of Threshold Current in Infrared Vertical-Cavity Surface-Emitting Lasers
The temperature dependence of threshold current I th in vertical-cavity surface-emitting lasers (VCSELs) can be approximated by the equation I th (T)=alpha+beta(T-T min ) 2 , where T min is the temperature of lowest I th ,alpha and beta are parameters, and temperature is T. We compare the temperatur...
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| Veröffentlicht in: | IEEE journal of quantum electronics 2006-10, Vol.42 (10), p.1078-1083 |
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| container_title | IEEE journal of quantum electronics |
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| creator | Chen Chen Leisher, P.O. Allerman, A.A. Geib, K.M. Choquette, K.D. |
| description | The temperature dependence of threshold current I th in vertical-cavity surface-emitting lasers (VCSELs) can be approximated by the equation I th (T)=alpha+beta(T-T min ) 2 , where T min is the temperature of lowest I th ,alpha and beta are parameters, and temperature is T. We compare the temperature dependence of threshold current in VCSELs with GaAs, InGaAs, and strain compensated InGaAs-GaAsP quantum wells. From our analysis we find the coefficient beta is related to the gain properties of the quantum well, and is shown to serve as a benchmark for the VCSEL temperature sensitivity. The incorporation of strain-compensated high-barrier GaAsP layers in the active region of 980-nm VCSELs is demonstrated to reduce the threshold dependence on temperature |
| doi_str_mv | 10.1109/JQE.2006.881828 |
| format | Article |
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We compare the temperature dependence of threshold current in VCSELs with GaAs, InGaAs, and strain compensated InGaAs-GaAsP quantum wells. From our analysis we find the coefficient beta is related to the gain properties of the quantum well, and is shown to serve as a benchmark for the VCSEL temperature sensitivity. 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We compare the temperature dependence of threshold current in VCSELs with GaAs, InGaAs, and strain compensated InGaAs-GaAsP quantum wells. From our analysis we find the coefficient beta is related to the gain properties of the quantum well, and is shown to serve as a benchmark for the VCSEL temperature sensitivity. 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| subjects | Approximation Beta Capacitive sensors Diode lasers Equations Exact sciences and technology Fundamental areas of phenomenology (including applications) Gallium arsenide Indium gallium arsenide Laser modes Lasers Mathematical analysis Optics Physics Quantum well lasers Quantum wells Semiconductor lasers laser diodes Surface emitting lasers temperature analysis Temperature dependence Temperature sensors Threshold current Threshold currents Vertical cavity surface emission lasers Vertical cavity surface emitting lasers vertical-cavity surface-emitting lasers (VCSELs) |
| title | Temperature Analysis of Threshold Current in Infrared Vertical-Cavity Surface-Emitting Lasers |
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