MM11 based flash memory cell model including characterization procedure

The objective of this paper is to present a flash cell model for static and transient simulations. As a core element of this model, a Philips MOS model (MM11) model has been used coupled with the charge neutrality expression in the structure. The charge neutrality, including the charge trapped in th...

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Bibliographische Detailangaben

Hauptverfasser:	Saillet, B., Regnier, A., Portal, J.M., Delsuc, B., Laffont, R., Masson, P., Bouchakour, R.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Channel hot electron injection Circuit simulation Electron traps Equations Flash memory Flash memory cells Nonvolatile memory Semiconductor memory Threshold voltage Tunneling
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