Two-Carrier Current Saturation in a Lateral Dmos

Two-Carrier Current Saturation in a Lateral Dmos

Conventional Ldmos transistors suffer from drain current "compression" in saturation (gm reduction). When the safe-operating area of the Ldmos is improved by suppressing the parasitic bipolar transistor, an unusual "expansion" in the drain characteristic emerges. This new device...

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Hauptverfasser: Lin, J., Hower, P.L.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bipolar transistors
Current density
Electrons
Impact ionization
Instruments
Kirk field collapse effect
Physics
Resistors
Semiconductor optical amplifiers
Space charge
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description Conventional Ldmos transistors suffer from drain current "compression" in saturation (gm reduction). When the safe-operating area of the Ldmos is improved by suppressing the parasitic bipolar transistor, an unusual "expansion" in the drain characteristic emerges. This new device behavior is described and a mechanism for the "expansion" proposed
doi_str_mv 10.1109/ISPSD.2006.1666078
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1946-0201
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Bipolar transistors
Current density
Electrons
Impact ionization
Instruments
Kirk field collapse effect
Physics
Resistors
Semiconductor optical amplifiers
Space charge
title Two-Carrier Current Saturation in a Lateral Dmos
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