Investigations of parallel connected IGBT's using electromagnetic field analysis

Chip current imbalances caused by the structure and layout of main circuit and gate circuit in an insulated gate bipolar transistor (IGBT) module were analyzed using three-dimensional electromagnetic analysis. To confirm the results of the analysis, we also measured the current of each chip using a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Morishita, K., Kitamura, S., Yamaguchi, Y., Yamaguchi, H., Nakayama, Y., Usui, O., Ohi, T., Thal, E.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Circuit testing Coils Conductors current imbalance Current measurement Electromagnetic analysis Electromagnetic fields Electromagnetic measurements Impedance Insulated gate bipolar transistors Package impedance Power semiconductor module Rogowski coils Semiconductor device packaging
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!