All-epitaxial InAlGaAs-InP VCSELs in the 1.3-1.6-μm wavelength range for CWDM band applications

All-epitaxial InAlGaAs-InP VCSELs in the 1.3-1.6-μm wavelength range for CWDM band applications

All-epitaxial InAlGaAs-InP vertical-cavity surface-emitting lasers grown by metal-organic chemical vapor deposition were successfully demonstrated in the wavelength ranging from 1.3 to 1.6 mum. The devices showed the high performances such as single-mode output power of higher than 1.1mW, sidemode s...

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Veröffentlicht in:IEEE photonics technology letters 2006-08, Vol.18 (16), p.1717-1719
Hauptverfasser: Park, M.-R., Kwon, O.-K., Han, W.-S., Lee, K.-H., Park, S.-J., Yoo, B.-S.
Format: Artikel
Sprache:eng
Schlagworte:
Chemical lasers
Chemical vapor deposition
Distributed Bragg reflectors
Epitaxial
Epitaxial growth
Fiber lasers
InAlGaAs
InP
metal-organic chemical vapor deposition (MOCVD)
MOCVD
monolithic
Optical fiber communication
Optical surface waves
Surface emitting lasers
Vertical cavity surface emitting lasers
vertical-cavity surface-emitting laser (VCSEL)
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Zusammenfassung:All-epitaxial InAlGaAs-InP vertical-cavity surface-emitting lasers grown by metal-organic chemical vapor deposition were successfully demonstrated in the wavelength ranging from 1.3 to 1.6 mum. The devices showed the high performances such as single-mode output power of higher than 1.1mW, sidemode suppression ratio of 37 dB, divergence angle of 9deg, and CW operation of temperature up to 80 degC. We achieved the modulation bandwidth exceeding 2.5 Gb/s and power penalty free transmission over 30 km
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2006.879940