Ion sources for commercial ion implanter applications
The authors review some of the history as well as recent developments in the implanter ion source field. It is noted that ion sources for implantation have changed considerably since implantation was first used commercially. Dramatic increases in beam output have been sustained with each new generat...
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| container_end_page | 2092 vol.4 |
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| creator | Walther, S.R. Pedersen, B.O. McKenna, C.M. |
| description | The authors review some of the history as well as recent developments in the implanter ion source field. It is noted that ion sources for implantation have changed considerably since implantation was first used commercially. Dramatic increases in beam output have been sustained with each new generation of ion implanters. In addition to the drive for improved beam currents, the need of the implant users for reliable long-life operation has driven much of the new development in implanter ion sources. In addition, the opportunity to achieve new capabilities, such as buried oxide layers, has sparked novel ion source designs to answer the demand. Particular attention is given here to microwave ion sources, the single ring cusp ion source, and multicusp ion sources.< > |
| doi_str_mv | 10.1109/PAC.1991.164876 |
| format | Conference Proceeding |
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It is noted that ion sources for implantation have changed considerably since implantation was first used commercially. Dramatic increases in beam output have been sustained with each new generation of ion implanters. In addition to the drive for improved beam currents, the need of the implant users for reliable long-life operation has driven much of the new development in implanter ion sources. In addition, the opportunity to achieve new capabilities, such as buried oxide layers, has sparked novel ion source designs to answer the demand. Particular attention is given here to microwave ion sources, the single ring cusp ion source, and multicusp ion sources.< ></description><identifier>ISBN: 0780301358</identifier><identifier>ISBN: 9780780301351</identifier><identifier>DOI: 10.1109/PAC.1991.164876</identifier><language>eng</language><publisher>IEEE</publisher><subject>Anodes ; Apertures ; Cathodes ; Electrons ; Fault location ; Implants ; Ion beams ; Ion implantation ; Ion sources ; Production</subject><ispartof>Conference Record of the 1991 IEEE Particle Accelerator Conference, 1991, p.2088-2092 vol.4</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/164876$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,4047,4048,27923,54918</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/164876$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Walther, S.R.</creatorcontrib><creatorcontrib>Pedersen, B.O.</creatorcontrib><creatorcontrib>McKenna, C.M.</creatorcontrib><title>Ion sources for commercial ion implanter applications</title><title>Conference Record of the 1991 IEEE Particle Accelerator Conference</title><addtitle>PAC</addtitle><description>The authors review some of the history as well as recent developments in the implanter ion source field. It is noted that ion sources for implantation have changed considerably since implantation was first used commercially. Dramatic increases in beam output have been sustained with each new generation of ion implanters. In addition to the drive for improved beam currents, the need of the implant users for reliable long-life operation has driven much of the new development in implanter ion sources. In addition, the opportunity to achieve new capabilities, such as buried oxide layers, has sparked novel ion source designs to answer the demand. Particular attention is given here to microwave ion sources, the single ring cusp ion source, and multicusp ion sources.< ></description><subject>Anodes</subject><subject>Apertures</subject><subject>Cathodes</subject><subject>Electrons</subject><subject>Fault location</subject><subject>Implants</subject><subject>Ion beams</subject><subject>Ion implantation</subject><subject>Ion sources</subject><subject>Production</subject><isbn>0780301358</isbn><isbn>9780780301351</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1991</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8tqwzAURAWl0DbNOtCVfsCurqSrxzKYPgKBdpF9kPUABTs2krvo39eQzmbgHBgYQnbAWgBmX7_3XQvWQgtKGq3uyBPThgkGAs0D2dZ6YWsQjUL7SPAwXWmdfoqPlaapUD-NYyw-u4HmVeVxHtx1iYW6eR6yd8tK6zO5T26ocfvfG3J6fzt1n83x6-PQ7Y9NNnppLGoZjTS9FpZ7ppJKUUvkyTnPIWDoBQpnVoQBeg5SycQdah5sMBKC2JCX22yOMZ7nkkdXfs-3X-IPdSJCkg</recordid><startdate>1991</startdate><enddate>1991</enddate><creator>Walther, S.R.</creator><creator>Pedersen, B.O.</creator><creator>McKenna, C.M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1991</creationdate><title>Ion sources for commercial ion implanter applications</title><author>Walther, S.R. ; Pedersen, B.O. ; McKenna, C.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i87t-9574e848b7392c06f6fe7452faac21d5db353a87455d1b21464f2a572d9d841d3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Anodes</topic><topic>Apertures</topic><topic>Cathodes</topic><topic>Electrons</topic><topic>Fault location</topic><topic>Implants</topic><topic>Ion beams</topic><topic>Ion implantation</topic><topic>Ion sources</topic><topic>Production</topic><toplevel>online_resources</toplevel><creatorcontrib>Walther, S.R.</creatorcontrib><creatorcontrib>Pedersen, B.O.</creatorcontrib><creatorcontrib>McKenna, C.M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Walther, S.R.</au><au>Pedersen, B.O.</au><au>McKenna, C.M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Ion sources for commercial ion implanter applications</atitle><btitle>Conference Record of the 1991 IEEE Particle Accelerator Conference</btitle><stitle>PAC</stitle><date>1991</date><risdate>1991</risdate><spage>2088</spage><epage>2092 vol.4</epage><pages>2088-2092 vol.4</pages><isbn>0780301358</isbn><isbn>9780780301351</isbn><abstract>The authors review some of the history as well as recent developments in the implanter ion source field. It is noted that ion sources for implantation have changed considerably since implantation was first used commercially. Dramatic increases in beam output have been sustained with each new generation of ion implanters. In addition to the drive for improved beam currents, the need of the implant users for reliable long-life operation has driven much of the new development in implanter ion sources. In addition, the opportunity to achieve new capabilities, such as buried oxide layers, has sparked novel ion source designs to answer the demand. Particular attention is given here to microwave ion sources, the single ring cusp ion source, and multicusp ion sources.< ></abstract><pub>IEEE</pub><doi>10.1109/PAC.1991.164876</doi></addata></record> |
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| identifier | ISBN: 0780301358 |
| ispartof | Conference Record of the 1991 IEEE Particle Accelerator Conference, 1991, p.2088-2092 vol.4 |
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| language | eng |
| recordid | cdi_ieee_primary_164876 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Anodes Apertures Cathodes Electrons Fault location Implants Ion beams Ion implantation Ion sources Production |
| title | Ion sources for commercial ion implanter applications |
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