Deep Trench Resistance and leakage Reduction - Poly1 Doping Process Optimization in High Volume DRAM Manufacturing for 300mm Factory

In this paper, we describe the influence of arsenic doped poly-silicon on signal margin and node leakage current of 110 nm deep trench DRAM products. Methods on optimizing both physical and electrical qualities of poly-silicon are presented and challenges of quick electrical characterization of the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Min-Soo Kim, Cooper, W., Simonson, B., Ricks, D., McDaniel, E., Miller, R., Chapman, R., Taylor, T., Fuller, R.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitors CMOS technology Doping Furnaces Leakage current Manufacturing processes Optimization methods Production facilities Random access memory Signal processing
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