Post Implant Strip Optimization for 90nm and Beyond Technologies

Optical emission spectroscopy, SEM, and SIMS were used to analyze the modified layer formed during exposure of resist materials to ion implant conditions and to characterize the removal rate of this modified layer upon exposure to various plasma strip chemistries on commercial strip tools. This meth...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Fuller, N.C.M., Santiago, A., Mello, K., Chienfan Yu, Molis, S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Chemical technology Implants Optical materials Particle beam optics Plasma applications Plasma chemistry Resists Spectroscopy Stimulated emission Strips
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