Post Implant Strip Optimization for 90nm and Beyond Technologies
Optical emission spectroscopy, SEM, and SIMS were used to analyze the modified layer formed during exposure of resist materials to ion implant conditions and to characterize the removal rate of this modified layer upon exposure to various plasma strip chemistries on commercial strip tools. This meth...
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| creator | Fuller, N.C.M. Santiago, A. Mello, K. Chienfan Yu Molis, S. |
| description | Optical emission spectroscopy, SEM, and SIMS were used to analyze the modified layer formed during exposure of resist materials to ion implant conditions and to characterize the removal rate of this modified layer upon exposure to various plasma strip chemistries on commercial strip tools. This methodology was used to evaluate candidate strip chemistries for reducing post implant strip defectivity and increasing device functional yield |
| doi_str_mv | 10.1109/ASMC.2006.1638770 |
| format | Conference Proceeding |
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This methodology was used to evaluate candidate strip chemistries for reducing post implant strip defectivity and increasing device functional yield</abstract><pub>IEEE</pub><doi>10.1109/ASMC.2006.1638770</doi><tpages>3</tpages></addata></record> |
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| ispartof | The 17th Annual SEMI/IEEE ASMC 2006 Conference, 2006, p.289-291 |
| issn | 1078-8743 2376-6697 |
| language | eng |
| recordid | cdi_ieee_primary_1638770 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Chemical technology Implants Optical materials Particle beam optics Plasma applications Plasma chemistry Resists Spectroscopy Stimulated emission Strips |
| title | Post Implant Strip Optimization for 90nm and Beyond Technologies |
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