Characteristics of short-wavelength (617< lambda <640 nm) Ga/sub 0.4/In/sub 0.6/P/(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P strained, thin multiple-quantum-well lasers

The authors examine the operating characteristics of short wavelength (617< lambda

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Veröffentlicht in:	IEEE photonics technology letters 1992-10, Vol.4 (10), p.1081-1083, Article 1081
Hauptverfasser:	Bour, D.P., Treat, D.W., Thornton, R.L., Bringans, R.D., Paoli, T.L., Geels, R.S., Welch, D.F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Artificial intelligence Diodes Electrons Optical pulses Quantum well devices Quantum well lasers Space vector pulse width modulation Substrates Temperature sensors Threshold current
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creator	Bour, D.P. Treat, D.W. Thornton, R.L. Bringans, R.D. Paoli, T.L. Geels, R.S. Welch, D.F.
description	The authors examine the operating characteristics of short wavelength (617< lambda
doi_str_mv	10.1109/68.163739
format	Article
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At room temperature, wavelengths as short as 617 nm have been achieved, with pulsed threshold current density of 2.5 kA/cm/sup 2/. As a result of greater electron confinement at longer wavelengths, the threshold, and its temperature sensitivity, are improved.< ></description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/68.163739</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>IEEE</publisher><subject>Artificial intelligence ; Diodes ; Electrons ; Optical pulses ; Quantum well devices ; Quantum well lasers ; Space vector pulse width modulation ; Substrates ; Temperature sensors ; Threshold current</subject><ispartof>IEEE photonics technology letters, 1992-10, Vol.4 (10), p.1081-1083, Article 1081</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c939-4071235a675e99efea6410cc19af02707e987c09a327d1719d463344edcd2433</citedby><cites>FETCH-LOGICAL-c939-4071235a675e99efea6410cc19af02707e987c09a327d1719d463344edcd2433</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/163739$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/163739$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Bour, D.P.</creatorcontrib><creatorcontrib>Treat, D.W.</creatorcontrib><creatorcontrib>Thornton, R.L.</creatorcontrib><creatorcontrib>Bringans, R.D.</creatorcontrib><creatorcontrib>Paoli, T.L.</creatorcontrib><creatorcontrib>Geels, R.S.</creatorcontrib><creatorcontrib>Welch, D.F.</creatorcontrib><title>Characteristics of short-wavelength (617< lambda <640 nm) Ga/sub 0.4/In/sub 0.6/P/(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P strained, thin multiple-quantum-well lasers</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>The authors examine the operating characteristics of short wavelength (617< lambda <640 nm) AlGaInP lasers containing three thin ( approximately 20 AA) compressively strained Ga/sub 0.4/In/sub 0.6/P/(Al/sub 0.6/Ga/sub 0.4/)/sub 0.5/In/sub 0.5/P quantum wells and Al/sub 0.5/In/sub 0.5/P cladding layers, grown by low pressure organometallic vapor phase epitaxy. At room temperature, wavelengths as short as 617 nm have been achieved, with pulsed threshold current density of 2.5 kA/cm/sup 2/. As a result of greater electron confinement at longer wavelengths, the threshold, and its temperature sensitivity, are improved.< ></description><subject>Artificial intelligence</subject><subject>Diodes</subject><subject>Electrons</subject><subject>Optical pulses</subject><subject>Quantum well devices</subject><subject>Quantum well lasers</subject><subject>Space vector pulse width modulation</subject><subject>Substrates</subject><subject>Temperature sensors</subject><subject>Threshold current</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNptkE9LAzEQxRdR8O_Bq6ccLbhNpskmDXiRorUgWND7ErOzNpLd1iS1-pH8lm5toSCe5g3zezPMy7JzYH0Apqkc9kFyxfVedgRaQM5Aif1Os04D8OIwO47xjTEQBRdH2fdoZoKxCYOLydlI5jWJs3lI-cp8oMf2Nc3IpQR1TbxpXipDrqVgpG16ZGxoXL4Q1hd00m6lpFN6eeN_u0-6JSD_pL0tUOzYgk5JTMG4FqsrkmauJc3SJ7fwmL8vTZuWTb5C77vDEUM8zQ5q4yOebetJ9nR3-zy6zx8ex5PRzUNuNde5YAoGvDBSFag11mikAGYtaFOzgWIK9VBZpg0fqAoU6EpIzoXAylYDwflJ1ttstWEeY8C6XATXmPBVAivXCZdyWG4S7lj6h7UumeTm7for_6_jYuNwiLjbvBn-APDTgRo</recordid><startdate>199210</startdate><enddate>199210</enddate><creator>Bour, D.P.</creator><creator>Treat, D.W.</creator><creator>Thornton, R.L.</creator><creator>Bringans, R.D.</creator><creator>Paoli, T.L.</creator><creator>Geels, R.S.</creator><creator>Welch, D.F.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>199210</creationdate><title>Characteristics of short-wavelength (617< lambda <640 nm) Ga/sub 0.4/In/sub 0.6/P/(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P strained, thin multiple-quantum-well lasers</title><author>Bour, D.P. ; Treat, D.W. ; Thornton, R.L. ; Bringans, R.D. ; Paoli, T.L. ; Geels, R.S. ; Welch, D.F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c939-4071235a675e99efea6410cc19af02707e987c09a327d1719d463344edcd2433</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Artificial intelligence</topic><topic>Diodes</topic><topic>Electrons</topic><topic>Optical pulses</topic><topic>Quantum well devices</topic><topic>Quantum well lasers</topic><topic>Space vector pulse width modulation</topic><topic>Substrates</topic><topic>Temperature sensors</topic><topic>Threshold current</topic><toplevel>online_resources</toplevel><creatorcontrib>Bour, D.P.</creatorcontrib><creatorcontrib>Treat, D.W.</creatorcontrib><creatorcontrib>Thornton, R.L.</creatorcontrib><creatorcontrib>Bringans, R.D.</creatorcontrib><creatorcontrib>Paoli, T.L.</creatorcontrib><creatorcontrib>Geels, R.S.</creatorcontrib><creatorcontrib>Welch, D.F.</creatorcontrib><collection>CrossRef</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bour, D.P.</au><au>Treat, D.W.</au><au>Thornton, R.L.</au><au>Bringans, R.D.</au><au>Paoli, T.L.</au><au>Geels, R.S.</au><au>Welch, D.F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characteristics of short-wavelength (617< lambda <640 nm) Ga/sub 0.4/In/sub 0.6/P/(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P strained, thin multiple-quantum-well lasers</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>1992-10</date><risdate>1992</risdate><volume>4</volume><issue>10</issue><spage>1081</spage><epage>1083</epage><pages>1081-1083</pages><artnum>1081</artnum><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>The authors examine the operating characteristics of short wavelength (617< lambda <640 nm) AlGaInP lasers containing three thin ( approximately 20 AA) compressively strained Ga/sub 0.4/In/sub 0.6/P/(Al/sub 0.6/Ga/sub 0.4/)/sub 0.5/In/sub 0.5/P quantum wells and Al/sub 0.5/In/sub 0.5/P cladding layers, grown by low pressure organometallic vapor phase epitaxy. At room temperature, wavelengths as short as 617 nm have been achieved, with pulsed threshold current density of 2.5 kA/cm/sup 2/. As a result of greater electron confinement at longer wavelengths, the threshold, and its temperature sensitivity, are improved.< ></abstract><pub>IEEE</pub><doi>10.1109/68.163739</doi><tpages>3</tpages></addata></record>
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subjects	Artificial intelligence Diodes Electrons Optical pulses Quantum well devices Quantum well lasers Space vector pulse width modulation Substrates Temperature sensors Threshold current
title	Characteristics of short-wavelength (617< lambda <640 nm) Ga/sub 0.4/In/sub 0.6/P/(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P strained, thin multiple-quantum-well lasers
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