Normally-Off GaN n-MOSFET with Schottky-Barrier Source and Drain on a p-GaN on Silicon Substrate

We fabricated a schottky barrier metal oxide semiconductor field effect transistor (SB-MOSFET) for the first time on a p-GaN with silicon auto doping into the nitrogen site, grown on silicon substrate. The source/drain and gate metals were formed by aluminum and gold, respectively. PECVD SiO 2 was u...

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Hauptverfasser:	Heon-Bok Lee, Hyun-Ick Cho, Kyong-Hum Back, Hyun-Su An, Jung-Hee Lee, Sung-Ho Hahm
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Aluminum Dielectric substrates FETs Gallium nitride Gold MOSFET circuits Nitrogen Schottky barriers Semiconductor device doping Silicon
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creator	Heon-Bok Lee Hyun-Ick Cho Kyong-Hum Back Hyun-Su An Jung-Hee Lee Sung-Ho Hahm
description	We fabricated a schottky barrier metal oxide semiconductor field effect transistor (SB-MOSFET) for the first time on a p-GaN with silicon auto doping into the nitrogen site, grown on silicon substrate. The source/drain and gate metals were formed by aluminum and gold, respectively. PECVD SiO 2 was used as a gate dielectric. The fabricated devices exhibited threshold voltage of 1.65 V, and maximum transconductance of 1.6 mS/mm at V DS =5 V. The normalized on-current was 3 mA/mm and the off-current was as low as 3x10 -9 A/mm.
doi_str_mv	10.1109/EDSSC.2005.1635396
format	Conference Proceeding
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The source/drain and gate metals were formed by aluminum and gold, respectively. PECVD SiO 2 was used as a gate dielectric. The fabricated devices exhibited threshold voltage of 1.65 V, and maximum transconductance of 1.6 mS/mm at V DS =5 V. The normalized on-current was 3 mA/mm and the off-current was as low as 3x10 -9 A/mm.</description><identifier>ISBN: 9780780393394</identifier><identifier>ISBN: 0780393392</identifier><identifier>DOI: 10.1109/EDSSC.2005.1635396</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum ; Dielectric substrates ; FETs ; Gallium nitride ; Gold ; MOSFET circuits ; Nitrogen ; Schottky barriers ; Semiconductor device doping ; Silicon</subject><ispartof>2005 IEEE Conference on Electron Devices and Solid-State Circuits, 2005, p.791-794</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1635396$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1635396$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Heon-Bok Lee</creatorcontrib><creatorcontrib>Hyun-Ick Cho</creatorcontrib><creatorcontrib>Kyong-Hum Back</creatorcontrib><creatorcontrib>Hyun-Su An</creatorcontrib><creatorcontrib>Jung-Hee Lee</creatorcontrib><creatorcontrib>Sung-Ho Hahm</creatorcontrib><title>Normally-Off GaN n-MOSFET with Schottky-Barrier Source and Drain on a p-GaN on Silicon Substrate</title><title>2005 IEEE Conference on Electron Devices and Solid-State Circuits</title><addtitle>EDSSC</addtitle><description>We fabricated a schottky barrier metal oxide semiconductor field effect transistor (SB-MOSFET) for the first time on a p-GaN with silicon auto doping into the nitrogen site, grown on silicon substrate. The source/drain and gate metals were formed by aluminum and gold, respectively. PECVD SiO 2 was used as a gate dielectric. The fabricated devices exhibited threshold voltage of 1.65 V, and maximum transconductance of 1.6 mS/mm at V DS =5 V. The normalized on-current was 3 mA/mm and the off-current was as low as 3x10 -9 A/mm.</description><subject>Aluminum</subject><subject>Dielectric substrates</subject><subject>FETs</subject><subject>Gallium nitride</subject><subject>Gold</subject><subject>MOSFET circuits</subject><subject>Nitrogen</subject><subject>Schottky barriers</subject><subject>Semiconductor device doping</subject><subject>Silicon</subject><isbn>9780780393394</isbn><isbn>0780393392</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkFFLwzAUhQMiKLN_QF_yB1ITb9Kkj9rNTZjrQ_V5pk3Col070gzZvzfDXS6cA5fzcbgI3TOaM0bLx8W8aar8iVKRswIElMUVykqpaFooAUp-g7Jp-qZpuADJ5S362oxhr_v-RGrn8FJv8EDe6-Z18YF_fdzhptuNMf6cyIsOwduAm_EYOov1YPA8aD_gccAaH8g5mmzje9-d9dhOMeho79C10_1ks4vO0GeCVyuyrpdv1fOaeCZFJKplhptCgQFhXGskF6mho0q1nWx1ujJppQXKGROOdp1TxskShOOKC9rCDD38c721dnsIfq_DaXv5A_wBsXFSVA</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Heon-Bok Lee</creator><creator>Hyun-Ick Cho</creator><creator>Kyong-Hum Back</creator><creator>Hyun-Su An</creator><creator>Jung-Hee Lee</creator><creator>Sung-Ho Hahm</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2005</creationdate><title>Normally-Off GaN n-MOSFET with Schottky-Barrier Source and Drain on a p-GaN on Silicon Substrate</title><author>Heon-Bok Lee ; Hyun-Ick Cho ; Kyong-Hum Back ; Hyun-Su An ; Jung-Hee Lee ; Sung-Ho Hahm</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-8b1d4d683d35dfbd745537f088bc7bab1d17e7e304115f0ccf8df7935f48450b3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Aluminum</topic><topic>Dielectric substrates</topic><topic>FETs</topic><topic>Gallium nitride</topic><topic>Gold</topic><topic>MOSFET circuits</topic><topic>Nitrogen</topic><topic>Schottky barriers</topic><topic>Semiconductor device doping</topic><topic>Silicon</topic><toplevel>online_resources</toplevel><creatorcontrib>Heon-Bok Lee</creatorcontrib><creatorcontrib>Hyun-Ick Cho</creatorcontrib><creatorcontrib>Kyong-Hum Back</creatorcontrib><creatorcontrib>Hyun-Su An</creatorcontrib><creatorcontrib>Jung-Hee Lee</creatorcontrib><creatorcontrib>Sung-Ho Hahm</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Heon-Bok Lee</au><au>Hyun-Ick Cho</au><au>Kyong-Hum Back</au><au>Hyun-Su An</au><au>Jung-Hee Lee</au><au>Sung-Ho Hahm</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Normally-Off GaN n-MOSFET with Schottky-Barrier Source and Drain on a p-GaN on Silicon Substrate</atitle><btitle>2005 IEEE Conference on Electron Devices and Solid-State Circuits</btitle><stitle>EDSSC</stitle><date>2005</date><risdate>2005</risdate><spage>791</spage><epage>794</epage><pages>791-794</pages><isbn>9780780393394</isbn><isbn>0780393392</isbn><abstract>We fabricated a schottky barrier metal oxide semiconductor field effect transistor (SB-MOSFET) for the first time on a p-GaN with silicon auto doping into the nitrogen site, grown on silicon substrate. The source/drain and gate metals were formed by aluminum and gold, respectively. PECVD SiO 2 was used as a gate dielectric. The fabricated devices exhibited threshold voltage of 1.65 V, and maximum transconductance of 1.6 mS/mm at V DS =5 V. The normalized on-current was 3 mA/mm and the off-current was as low as 3x10 -9 A/mm.</abstract><pub>IEEE</pub><doi>10.1109/EDSSC.2005.1635396</doi><tpages>4</tpages></addata></record>
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language	eng
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Aluminum Dielectric substrates FETs Gallium nitride Gold MOSFET circuits Nitrogen Schottky barriers Semiconductor device doping Silicon
title	Normally-Off GaN n-MOSFET with Schottky-Barrier Source and Drain on a p-GaN on Silicon Substrate
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