A CMOS-Compatible WORM Memory for Low-Cost Non-Volatile Memory Applications

A Write-Once-Read-Many (WORM) memory using a CMOS-compatible Antifuse (AF) element for low-cost nonvolatile memory is presented. The AF device is formed on an NMOS with PLDD implants (MOS-channel AF) to enhance hot-carrier effects. The AF is programmed by applying a high voltage across the channel u...

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Bibliographische Detailangaben

Hauptverfasser:	Barsatan, R., Tsz Yin Man, Chan, Mansun
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Breakdown voltage CMOS logic circuits CMOS process Costs Dielectrics Electric breakdown Hot carrier effects Implants Nonvolatile memory RFID tags
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