A technique to increase the efficiency of high-voltage charge pumps
A charge pump that utilizes a MOSFET body diode as a charge transfer switch is discussed. The body diode is characterized and a body diode model is developed for simulating the charge pump circuit. A 10% increase of voltage gain has been achieved in the proposed switching technique when compared wit...
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| Veröffentlicht in: | IEEE transactions on circuits and systems. 2, Analog and digital signal processing Analog and digital signal processing, 2006-05, Vol.53 (5), p.364-368 |
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| container_end_page | 368 |
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| container_issue | 5 |
| container_start_page | 364 |
| container_title | IEEE transactions on circuits and systems. 2, Analog and digital signal processing |
| container_volume | 53 |
| creator | Hoque, M.R. Ahmad, T. McNutt, T.R. Mantooth, H.A. Mojarradi, M.M. |
| description | A charge pump that utilizes a MOSFET body diode as a charge transfer switch is discussed. The body diode is characterized and a body diode model is developed for simulating the charge pump circuit. A 10% increase of voltage gain has been achieved in the proposed switching technique when compared with a traditional Dickson charge pump. The top plate and bottom plate switching technique have also been illustrated to improve the efficiency of the charge pump. A six-stage Dickson charge pump was designed to produce a 19 V output from a 3.3-V supply, using a 4 MHz, two-phase nonoverlapping clock signal driving the charge pump. The design was fabricated in a 0.35-/spl mu/m SOI CMOS process. An efficiency of 79% is achieved at a load current of approximately 19 /spl mu/A. |
| doi_str_mv | 10.1109/TCSII.2006.869922 |
| format | Article |
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The body diode is characterized and a body diode model is developed for simulating the charge pump circuit. A 10% increase of voltage gain has been achieved in the proposed switching technique when compared with a traditional Dickson charge pump. The top plate and bottom plate switching technique have also been illustrated to improve the efficiency of the charge pump. A six-stage Dickson charge pump was designed to produce a 19 V output from a 3.3-V supply, using a 4 MHz, two-phase nonoverlapping clock signal driving the charge pump. The design was fabricated in a 0.35-/spl mu/m SOI CMOS process. An efficiency of 79% is achieved at a load current of approximately 19 /spl mu/A.</description><subject>Charge pump</subject><subject>Charge pumps</subject><subject>Charge transfer</subject><subject>Circuit simulation</subject><subject>Circuits</subject><subject>Clocks</subject><subject>CMOS</subject><subject>CMOS process</subject><subject>dc-dc converter</subject><subject>dc-dc power conversion</subject><subject>Diodes</subject><subject>MOSFET circuits</subject><subject>MOSFETs</subject><subject>Signal design</subject><subject>silicon-on-insulator (SOI)</subject><subject>Switches</subject><subject>Switching</subject><subject>Voltage</subject><subject>Voltage gain</subject><subject>voltage multiplier</subject><issn>1549-7747</issn><issn>1057-7130</issn><issn>1558-3791</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kE1LxDAQhoMouK7-APFSPOipayZpmua4FD8WFjy495Cm022WblubVvDf21pB8OBp3sPzDjMPIddAVwBUPezSt81mxSiNV0msFGMnZAFCJCGXCk6nHKlQykiekwvvD5QyRTlbkHQd9GjL2r0PGPRN4GrbofFjLjHAonDWYW0_g6YISrcvw4-m6s0eA1uabhztcGz9JTkrTOXx6mcuye7pcZe-hNvX50263oY2YtCHCVfcChtlwmTS5DTnHFQus9haBYjCiFwiA5BJjsZgJhiomCZJzOM8yilfkvt5bds147W-10fnLVaVqbEZvE5UzCASYiLv_iVZApRRpUbw9g94aIauHp_QChijAjiMEMyQ7RrvOyx027mj6T41UD3J19_y9SRfz_LHzs3ccYj4y8ec8UjwLzT0fzI</recordid><startdate>20060501</startdate><enddate>20060501</enddate><creator>Hoque, M.R.</creator><creator>Ahmad, T.</creator><creator>McNutt, T.R.</creator><creator>Mantooth, H.A.</creator><creator>Mojarradi, M.M.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20060501</creationdate><title>A technique to increase the efficiency of high-voltage charge pumps</title><author>Hoque, M.R. ; Ahmad, T. ; McNutt, T.R. ; Mantooth, H.A. ; Mojarradi, M.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c421t-8393c5c4b5ab7ad0d3319d7b6cc91ee5a5d7e21178deaaeb52196088636d4d03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Charge pump</topic><topic>Charge pumps</topic><topic>Charge transfer</topic><topic>Circuit simulation</topic><topic>Circuits</topic><topic>Clocks</topic><topic>CMOS</topic><topic>CMOS process</topic><topic>dc-dc converter</topic><topic>dc-dc power conversion</topic><topic>Diodes</topic><topic>MOSFET circuits</topic><topic>MOSFETs</topic><topic>Signal design</topic><topic>silicon-on-insulator (SOI)</topic><topic>Switches</topic><topic>Switching</topic><topic>Voltage</topic><topic>Voltage gain</topic><topic>voltage multiplier</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hoque, M.R.</creatorcontrib><creatorcontrib>Ahmad, T.</creatorcontrib><creatorcontrib>McNutt, T.R.</creatorcontrib><creatorcontrib>Mantooth, H.A.</creatorcontrib><creatorcontrib>Mojarradi, M.M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on circuits and systems. 2, Analog and digital signal processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hoque, M.R.</au><au>Ahmad, T.</au><au>McNutt, T.R.</au><au>Mantooth, H.A.</au><au>Mojarradi, M.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A technique to increase the efficiency of high-voltage charge pumps</atitle><jtitle>IEEE transactions on circuits and systems. 2, Analog and digital signal processing</jtitle><stitle>TCSII</stitle><date>2006-05-01</date><risdate>2006</risdate><volume>53</volume><issue>5</issue><spage>364</spage><epage>368</epage><pages>364-368</pages><issn>1549-7747</issn><issn>1057-7130</issn><eissn>1558-3791</eissn><coden>ICSPE5</coden><abstract>A charge pump that utilizes a MOSFET body diode as a charge transfer switch is discussed. The body diode is characterized and a body diode model is developed for simulating the charge pump circuit. A 10% increase of voltage gain has been achieved in the proposed switching technique when compared with a traditional Dickson charge pump. The top plate and bottom plate switching technique have also been illustrated to improve the efficiency of the charge pump. A six-stage Dickson charge pump was designed to produce a 19 V output from a 3.3-V supply, using a 4 MHz, two-phase nonoverlapping clock signal driving the charge pump. The design was fabricated in a 0.35-/spl mu/m SOI CMOS process. An efficiency of 79% is achieved at a load current of approximately 19 /spl mu/A.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TCSII.2006.869922</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 1549-7747 |
| ispartof | IEEE transactions on circuits and systems. 2, Analog and digital signal processing, 2006-05, Vol.53 (5), p.364-368 |
| issn | 1549-7747 1057-7130 1558-3791 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Charge pump Charge pumps Charge transfer Circuit simulation Circuits Clocks CMOS CMOS process dc-dc converter dc-dc power conversion Diodes MOSFET circuits MOSFETs Signal design silicon-on-insulator (SOI) Switches Switching Voltage Voltage gain voltage multiplier |
| title | A technique to increase the efficiency of high-voltage charge pumps |
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