Model requirements for simulation of low-voltage MOSFET in automotive applications

This paper focuses on the modeling of low-voltage automotive power electronic circuits to obtain accurate system simulation, including estimation of losses. The aim is to compare several metal-oxide semiconductor field-effect transistor (MOSFET) models to find out which can be used for low-voltage,...

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Veröffentlicht in:	IEEE transactions on power electronics 2006-05, Vol.21 (3), p.613-624
Hauptverfasser:	Buttay, C., Morel, H., Allard, B., Lefranc, P., Brevet, O.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analytical models Automobiles Automotive applications Automotive components Automotive engineering Characterization circuit parasitics Circuit simulation Circuit testing Circuits Computer simulation Conversion Electric power electrothermal Engineering Sciences Mathematical models Metal oxide semiconductors MOS devices MOSFET circuits MOSFETs Other Power electronics power metal-oxide semiconductor field-effect transistor (MOSFET) Power MOSFET Power system modeling Semiconductors Simulation Transistors validation
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