The effect of TCA on SIMOX material quality and device performance
High temperature annealing of the as-implanted material has proven to be critical for the formation of low defect SIMOX (separation by implanted oxygen) SOI (silicon-on-insulator). The presence of TCA (1,1,1-trichloroethane) in the annealing ambient and its effect on SIMOX material properties are un...
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| creator | Allen, L.P. Anc, M.J. Cordts, B.F. Campisi, G. Sandow, P.M. |
| description | High temperature annealing of the as-implanted material has proven to be critical for the formation of low defect SIMOX (separation by implanted oxygen) SOI (silicon-on-insulator). The presence of TCA (1,1,1-trichloroethane) in the annealing ambient and its effect on SIMOX material properties are under investigation. A linear design-of-experiment for annealing which includes two stages of TCA in the anneal has been performed. Three responses of the material with respect to the TCA incorporation were modeled: (1) silicon and BOX defects; (2) heavy metal incorporation and behavior; and (3) submicron CMOS transistor radiation hardness response. As compared with a no-TCA standard, etching studies reveal that the defect density of the silicon is reduced with the presence of the TCA during the anneal. It is also shown that a minute amount of TCA introduced in the initial stage of the anneal is sufficient to reduce the defect density.< > |
| doi_str_mv | 10.1109/SOI.1991.162862 |
| format | Conference Proceeding |
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The presence of TCA (1,1,1-trichloroethane) in the annealing ambient and its effect on SIMOX material properties are under investigation. A linear design-of-experiment for annealing which includes two stages of TCA in the anneal has been performed. Three responses of the material with respect to the TCA incorporation were modeled: (1) silicon and BOX defects; (2) heavy metal incorporation and behavior; and (3) submicron CMOS transistor radiation hardness response. As compared with a no-TCA standard, etching studies reveal that the defect density of the silicon is reduced with the presence of the TCA during the anneal. It is also shown that a minute amount of TCA introduced in the initial stage of the anneal is sufficient to reduce the defect density.< ></description><identifier>ISBN: 9780780301849</identifier><identifier>ISBN: 0780301846</identifier><identifier>DOI: 10.1109/SOI.1991.162862</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Electron devices ; Etching ; Inorganic materials ; Laboratories ; Material properties ; Scanning electron microscopy ; Semiconductor device modeling ; Silicon ; Temperature</subject><ispartof>1991 IEEE International SOI Conference Proceedings, 1991, p.72-73</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/162862$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,778,782,787,788,2054,4038,4039,27912,54907</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/162862$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Allen, L.P.</creatorcontrib><creatorcontrib>Anc, M.J.</creatorcontrib><creatorcontrib>Cordts, B.F.</creatorcontrib><creatorcontrib>Campisi, G.</creatorcontrib><creatorcontrib>Sandow, P.M.</creatorcontrib><title>The effect of TCA on SIMOX material quality and device performance</title><title>1991 IEEE International SOI Conference Proceedings</title><addtitle>SOI</addtitle><description>High temperature annealing of the as-implanted material has proven to be critical for the formation of low defect SIMOX (separation by implanted oxygen) SOI (silicon-on-insulator). The presence of TCA (1,1,1-trichloroethane) in the annealing ambient and its effect on SIMOX material properties are under investigation. A linear design-of-experiment for annealing which includes two stages of TCA in the anneal has been performed. Three responses of the material with respect to the TCA incorporation were modeled: (1) silicon and BOX defects; (2) heavy metal incorporation and behavior; and (3) submicron CMOS transistor radiation hardness response. As compared with a no-TCA standard, etching studies reveal that the defect density of the silicon is reduced with the presence of the TCA during the anneal. It is also shown that a minute amount of TCA introduced in the initial stage of the anneal is sufficient to reduce the defect density.< ></description><subject>Annealing</subject><subject>Electron devices</subject><subject>Etching</subject><subject>Inorganic materials</subject><subject>Laboratories</subject><subject>Material properties</subject><subject>Scanning electron microscopy</subject><subject>Semiconductor device modeling</subject><subject>Silicon</subject><subject>Temperature</subject><isbn>9780780301849</isbn><isbn>0780301846</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1991</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jrsKwkAQRRdEUDS1YDU_YNzJy2ypQdFCUiSFXViSWVzJy00U8vcGtPZy4BSnuYytkNuIXGyT-GKjEGhj4ISBM2GW2IV8xOUYemLGrK578HGez4XvzdkhvROQUpT30ChIoz00NSSXa3yDSvZktCzh-ZKl7geQdQEFvXVO0JJRjalkndOSTZUsO7J-XrD16ZhG540moqw1upJmyL6H3L_xA0hFOBI</recordid><startdate>1991</startdate><enddate>1991</enddate><creator>Allen, L.P.</creator><creator>Anc, M.J.</creator><creator>Cordts, B.F.</creator><creator>Campisi, G.</creator><creator>Sandow, P.M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1991</creationdate><title>The effect of TCA on SIMOX material quality and device performance</title><author>Allen, L.P. ; Anc, M.J. ; Cordts, B.F. ; Campisi, G. ; Sandow, P.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_1628623</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Annealing</topic><topic>Electron devices</topic><topic>Etching</topic><topic>Inorganic materials</topic><topic>Laboratories</topic><topic>Material properties</topic><topic>Scanning electron microscopy</topic><topic>Semiconductor device modeling</topic><topic>Silicon</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Allen, L.P.</creatorcontrib><creatorcontrib>Anc, M.J.</creatorcontrib><creatorcontrib>Cordts, B.F.</creatorcontrib><creatorcontrib>Campisi, G.</creatorcontrib><creatorcontrib>Sandow, P.M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Allen, L.P.</au><au>Anc, M.J.</au><au>Cordts, B.F.</au><au>Campisi, G.</au><au>Sandow, P.M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The effect of TCA on SIMOX material quality and device performance</atitle><btitle>1991 IEEE International SOI Conference Proceedings</btitle><stitle>SOI</stitle><date>1991</date><risdate>1991</risdate><spage>72</spage><epage>73</epage><pages>72-73</pages><isbn>9780780301849</isbn><isbn>0780301846</isbn><abstract>High temperature annealing of the as-implanted material has proven to be critical for the formation of low defect SIMOX (separation by implanted oxygen) SOI (silicon-on-insulator). The presence of TCA (1,1,1-trichloroethane) in the annealing ambient and its effect on SIMOX material properties are under investigation. A linear design-of-experiment for annealing which includes two stages of TCA in the anneal has been performed. Three responses of the material with respect to the TCA incorporation were modeled: (1) silicon and BOX defects; (2) heavy metal incorporation and behavior; and (3) submicron CMOS transistor radiation hardness response. As compared with a no-TCA standard, etching studies reveal that the defect density of the silicon is reduced with the presence of the TCA during the anneal. It is also shown that a minute amount of TCA introduced in the initial stage of the anneal is sufficient to reduce the defect density.< ></abstract><pub>IEEE</pub><doi>10.1109/SOI.1991.162862</doi></addata></record> |
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| ispartof | 1991 IEEE International SOI Conference Proceedings, 1991, p.72-73 |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Annealing Electron devices Etching Inorganic materials Laboratories Material properties Scanning electron microscopy Semiconductor device modeling Silicon Temperature |
| title | The effect of TCA on SIMOX material quality and device performance |
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