The effect of TCA on SIMOX material quality and device performance

High temperature annealing of the as-implanted material has proven to be critical for the formation of low defect SIMOX (separation by implanted oxygen) SOI (silicon-on-insulator). The presence of TCA (1,1,1-trichloroethane) in the annealing ambient and its effect on SIMOX material properties are under investigation. A linear design-of-experiment for annealing which includes two stages of TCA in the anneal has been performed. Three responses of the material with respect to the TCA incorporation were modeled: (1) silicon and BOX defects; (2) heavy metal incorporation and behavior; and (3) submicron CMOS transistor radiation hardness response. As compared with a no-TCA standard, etching studies reveal that the defect density of the silicon is reduced with the presence of the TCA during the anneal. It is also shown that a minute amount of TCA introduced in the initial stage of the anneal is sufficient to reduce the defect density.< >