A silicon-on-insulator circuit for high-temperature, high-voltage applications

The authors previously proposed the concept of a composite high-voltage device using series-connected low-voltage SOI (silicon-on-insulator) MOSFETs. In the present work, they demonstrate how the composite device can circumvent the fundamental materials limitations of bulk devices for high-voltage,...

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Bibliographische Detailangaben

Hauptverfasser:	Valeri, S.J., Robinson, A.L., Erskine, J.C.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Breakdown voltage Circuits Composite materials Doping Electric breakdown Laboratories MOSFETs Neodymium Silicon on insulator technology Temperature
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