A silicon-on-insulator circuit for high-temperature, high-voltage applications
The authors previously proposed the concept of a composite high-voltage device using series-connected low-voltage SOI (silicon-on-insulator) MOSFETs. In the present work, they demonstrate how the composite device can circumvent the fundamental materials limitations of bulk devices for high-voltage,...
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| creator | Valeri, S.J. Robinson, A.L. Erskine, J.C. |
| description | The authors previously proposed the concept of a composite high-voltage device using series-connected low-voltage SOI (silicon-on-insulator) MOSFETs. In the present work, they demonstrate how the composite device can circumvent the fundamental materials limitations of bulk devices for high-voltage, high-temperature applications. Experimental circuits were fabricated on SIMOX (separation by implanted oxygen) substrates using an SOI NMOS process. For the purpose of demonstrations, external resistors were used as the bias elements. Individual transistor breakdown voltages were about 6-7 V, and did not vary significantly from 24 degrees C to 400 degrees C. The composite device characteristics closely resemble those of the individual MOSFETs. In particular, the breakdown voltage (typically 26-30 V) is nearly constant over the temperature range studied. Drain characteristics of a typical five-transistor composite device are shown for several stage temperatures.< > |
| doi_str_mv | 10.1109/SOI.1991.162856 |
| format | Conference Proceeding |
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In the present work, they demonstrate how the composite device can circumvent the fundamental materials limitations of bulk devices for high-voltage, high-temperature applications. Experimental circuits were fabricated on SIMOX (separation by implanted oxygen) substrates using an SOI NMOS process. For the purpose of demonstrations, external resistors were used as the bias elements. Individual transistor breakdown voltages were about 6-7 V, and did not vary significantly from 24 degrees C to 400 degrees C. The composite device characteristics closely resemble those of the individual MOSFETs. In particular, the breakdown voltage (typically 26-30 V) is nearly constant over the temperature range studied. Drain characteristics of a typical five-transistor composite device are shown for several stage temperatures.< ></description><identifier>ISBN: 9780780301849</identifier><identifier>ISBN: 0780301846</identifier><identifier>DOI: 10.1109/SOI.1991.162856</identifier><language>eng</language><publisher>IEEE</publisher><subject>Breakdown voltage ; Circuits ; Composite materials ; Doping ; Electric breakdown ; Laboratories ; MOSFETs ; Neodymium ; Silicon on insulator technology ; Temperature</subject><ispartof>1991 IEEE International SOI Conference Proceedings, 1991, p.60-61</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/162856$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/162856$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Valeri, S.J.</creatorcontrib><creatorcontrib>Robinson, A.L.</creatorcontrib><creatorcontrib>Erskine, J.C.</creatorcontrib><title>A silicon-on-insulator circuit for high-temperature, high-voltage applications</title><title>1991 IEEE International SOI Conference Proceedings</title><addtitle>SOI</addtitle><description>The authors previously proposed the concept of a composite high-voltage device using series-connected low-voltage SOI (silicon-on-insulator) MOSFETs. In the present work, they demonstrate how the composite device can circumvent the fundamental materials limitations of bulk devices for high-voltage, high-temperature applications. Experimental circuits were fabricated on SIMOX (separation by implanted oxygen) substrates using an SOI NMOS process. For the purpose of demonstrations, external resistors were used as the bias elements. Individual transistor breakdown voltages were about 6-7 V, and did not vary significantly from 24 degrees C to 400 degrees C. The composite device characteristics closely resemble those of the individual MOSFETs. In particular, the breakdown voltage (typically 26-30 V) is nearly constant over the temperature range studied. Drain characteristics of a typical five-transistor composite device are shown for several stage temperatures.< ></description><subject>Breakdown voltage</subject><subject>Circuits</subject><subject>Composite materials</subject><subject>Doping</subject><subject>Electric breakdown</subject><subject>Laboratories</subject><subject>MOSFETs</subject><subject>Neodymium</subject><subject>Silicon on insulator technology</subject><subject>Temperature</subject><isbn>9780780301849</isbn><isbn>0780301846</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1991</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9Ts0KwjAYK4ig6M6Cpz2Am637cT2KKHrRg95HGd-2T7q1tJ3g21uYZ0MgIYEQQlaMxoxRvn3crzHjnMUs3xVZPiEB3xfUM6GsSPmMBNa-qEeaUZ6lc3I7hBYlVqqPPLG3gxROmbBCUw3owtr7Fps2ctBpMMINBjZj8lbSiQZCobUfEA5Vb5dkWgtpIfjpgqzPp-fxEiEAlNpgJ8ynHM8lf8svOsc-Yw</recordid><startdate>1991</startdate><enddate>1991</enddate><creator>Valeri, S.J.</creator><creator>Robinson, A.L.</creator><creator>Erskine, J.C.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1991</creationdate><title>A silicon-on-insulator circuit for high-temperature, high-voltage applications</title><author>Valeri, S.J. ; Robinson, A.L. ; Erskine, J.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_1628563</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Breakdown voltage</topic><topic>Circuits</topic><topic>Composite materials</topic><topic>Doping</topic><topic>Electric breakdown</topic><topic>Laboratories</topic><topic>MOSFETs</topic><topic>Neodymium</topic><topic>Silicon on insulator technology</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Valeri, S.J.</creatorcontrib><creatorcontrib>Robinson, A.L.</creatorcontrib><creatorcontrib>Erskine, J.C.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Valeri, S.J.</au><au>Robinson, A.L.</au><au>Erskine, J.C.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A silicon-on-insulator circuit for high-temperature, high-voltage applications</atitle><btitle>1991 IEEE International SOI Conference Proceedings</btitle><stitle>SOI</stitle><date>1991</date><risdate>1991</risdate><spage>60</spage><epage>61</epage><pages>60-61</pages><isbn>9780780301849</isbn><isbn>0780301846</isbn><abstract>The authors previously proposed the concept of a composite high-voltage device using series-connected low-voltage SOI (silicon-on-insulator) MOSFETs. In the present work, they demonstrate how the composite device can circumvent the fundamental materials limitations of bulk devices for high-voltage, high-temperature applications. Experimental circuits were fabricated on SIMOX (separation by implanted oxygen) substrates using an SOI NMOS process. For the purpose of demonstrations, external resistors were used as the bias elements. Individual transistor breakdown voltages were about 6-7 V, and did not vary significantly from 24 degrees C to 400 degrees C. The composite device characteristics closely resemble those of the individual MOSFETs. In particular, the breakdown voltage (typically 26-30 V) is nearly constant over the temperature range studied. Drain characteristics of a typical five-transistor composite device are shown for several stage temperatures.< ></abstract><pub>IEEE</pub><doi>10.1109/SOI.1991.162856</doi></addata></record> |
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| identifier | ISBN: 9780780301849 |
| ispartof | 1991 IEEE International SOI Conference Proceedings, 1991, p.60-61 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Breakdown voltage Circuits Composite materials Doping Electric breakdown Laboratories MOSFETs Neodymium Silicon on insulator technology Temperature |
| title | A silicon-on-insulator circuit for high-temperature, high-voltage applications |
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