Power MOSFETs reverse conduction revisited

Power MOSFETs reverse conduction revisited

A contribution to the characterization of power MOS transistors under optimized switching behavior is presented. Reverse conduction through the channel resistance is imposed, avoiding the problem of integral diode recovery time without using external diodes. The control circuit design is discussed....

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Hauptverfasser: Ferreira, A., Simas, M.I.C.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bridge circuits
Circuit topology
Diodes
Frequency
Immune system
Leg
MOSFETs
Resonance
Stress
Voltage
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Simas, M.I.C.
description A contribution to the characterization of power MOS transistors under optimized switching behavior is presented. Reverse conduction through the channel resistance is imposed, avoiding the problem of integral diode recovery time without using external diodes. The control circuit design is discussed. Performance and drawbacks are defined and tested in a series resonant converter.< >
doi_str_mv 10.1109/PESC.1991.162709
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fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_162709</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>162709</ieee_id><sourcerecordid>162709</sourcerecordid><originalsourceid>FETCH-LOGICAL-i172t-71465e1a3052b2f1eea79e5c3d0bbf2898604c357062b48ecb170c693642070e3</originalsourceid><addsrcrecordid>eNotj81Lw0AUxBdEUGruxVPOQuJ7-5l3lFA_oNJC7blkNy-woo3sRsX_3kgdBgZ-MAMjxBKhRgS63a52bY1EWKOVDuhMFOQamK0ACNSFKHJ-hVnagCVzKW624zen8nmzu1-95DLxF6fMZRiP_WeY4nj8QzHHifsrcT50b5mL_1yI_dxpH6v15uGpvVtXEZ2cKofaGsZOgZFeDsjcOWITVA_eD7KhxoIOyjiw0uuGg0cHwZKyWoIDVgtxfdqNzHz4SPG9Sz-H0yH1C8oxPrk</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Power MOSFETs reverse conduction revisited</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Ferreira, A. ; Simas, M.I.C.</creator><creatorcontrib>Ferreira, A. ; Simas, M.I.C.</creatorcontrib><description>A contribution to the characterization of power MOS transistors under optimized switching behavior is presented. Reverse conduction through the channel resistance is imposed, avoiding the problem of integral diode recovery time without using external diodes. The control circuit design is discussed. Performance and drawbacks are defined and tested in a series resonant converter.&lt; &gt;</description><identifier>ISBN: 9780780300903</identifier><identifier>ISBN: 0780300904</identifier><identifier>DOI: 10.1109/PESC.1991.162709</identifier><language>eng</language><publisher>IEEE</publisher><subject>Bridge circuits ; Circuit topology ; Diodes ; Frequency ; Immune system ; Leg ; MOSFETs ; Resonance ; Stress ; Voltage</subject><ispartof>PESC '91 Record 22nd Annual IEEE Power Electronics Specialists Conference, 1991, p.416-422</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/162709$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/162709$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ferreira, A.</creatorcontrib><creatorcontrib>Simas, M.I.C.</creatorcontrib><title>Power MOSFETs reverse conduction revisited</title><title>PESC '91 Record 22nd Annual IEEE Power Electronics Specialists Conference</title><addtitle>PESC</addtitle><description>A contribution to the characterization of power MOS transistors under optimized switching behavior is presented. Reverse conduction through the channel resistance is imposed, avoiding the problem of integral diode recovery time without using external diodes. The control circuit design is discussed. Performance and drawbacks are defined and tested in a series resonant converter.&lt; &gt;</description><subject>Bridge circuits</subject><subject>Circuit topology</subject><subject>Diodes</subject><subject>Frequency</subject><subject>Immune system</subject><subject>Leg</subject><subject>MOSFETs</subject><subject>Resonance</subject><subject>Stress</subject><subject>Voltage</subject><isbn>9780780300903</isbn><isbn>0780300904</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1991</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj81Lw0AUxBdEUGruxVPOQuJ7-5l3lFA_oNJC7blkNy-woo3sRsX_3kgdBgZ-MAMjxBKhRgS63a52bY1EWKOVDuhMFOQamK0ACNSFKHJ-hVnagCVzKW624zen8nmzu1-95DLxF6fMZRiP_WeY4nj8QzHHifsrcT50b5mL_1yI_dxpH6v15uGpvVtXEZ2cKofaGsZOgZFeDsjcOWITVA_eD7KhxoIOyjiw0uuGg0cHwZKyWoIDVgtxfdqNzHz4SPG9Sz-H0yH1C8oxPrk</recordid><startdate>1991</startdate><enddate>1991</enddate><creator>Ferreira, A.</creator><creator>Simas, M.I.C.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1991</creationdate><title>Power MOSFETs reverse conduction revisited</title><author>Ferreira, A. ; Simas, M.I.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-71465e1a3052b2f1eea79e5c3d0bbf2898604c357062b48ecb170c693642070e3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Bridge circuits</topic><topic>Circuit topology</topic><topic>Diodes</topic><topic>Frequency</topic><topic>Immune system</topic><topic>Leg</topic><topic>MOSFETs</topic><topic>Resonance</topic><topic>Stress</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Ferreira, A.</creatorcontrib><creatorcontrib>Simas, M.I.C.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ferreira, A.</au><au>Simas, M.I.C.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Power MOSFETs reverse conduction revisited</atitle><btitle>PESC '91 Record 22nd Annual IEEE Power Electronics Specialists Conference</btitle><stitle>PESC</stitle><date>1991</date><risdate>1991</risdate><spage>416</spage><epage>422</epage><pages>416-422</pages><isbn>9780780300903</isbn><isbn>0780300904</isbn><abstract>A contribution to the characterization of power MOS transistors under optimized switching behavior is presented. Reverse conduction through the channel resistance is imposed, avoiding the problem of integral diode recovery time without using external diodes. The control circuit design is discussed. Performance and drawbacks are defined and tested in a series resonant converter.&lt; &gt;</abstract><pub>IEEE</pub><doi>10.1109/PESC.1991.162709</doi><tpages>7</tpages></addata></record>
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ispartof PESC '91 Record 22nd Annual IEEE Power Electronics Specialists Conference, 1991, p.416-422
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Bridge circuits
Circuit topology
Diodes
Frequency
Immune system
Leg
MOSFETs
Resonance
Stress
Voltage
title Power MOSFETs reverse conduction revisited
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-12T18%3A32%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Power%20MOSFETs%20reverse%20conduction%20revisited&rft.btitle=PESC%20'91%20Record%2022nd%20Annual%20IEEE%20Power%20Electronics%20Specialists%20Conference&rft.au=Ferreira,%20A.&rft.date=1991&rft.spage=416&rft.epage=422&rft.pages=416-422&rft.isbn=9780780300903&rft.isbn_list=0780300904&rft_id=info:doi/10.1109/PESC.1991.162709&rft_dat=%3Cieee_6IE%3E162709%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=162709&rfr_iscdi=true