Power MOSFETs reverse conduction revisited

Power MOSFETs reverse conduction revisited

A contribution to the characterization of power MOS transistors under optimized switching behavior is presented. Reverse conduction through the channel resistance is imposed, avoiding the problem of integral diode recovery time without using external diodes. The control circuit design is discussed....

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Ferreira, A., Simas, M.I.C.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bridge circuits
Circuit topology
Diodes
Frequency
Immune system
Leg
MOSFETs
Resonance
Stress
Voltage
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Beschreibung
Zusammenfassung:A contribution to the characterization of power MOS transistors under optimized switching behavior is presented. Reverse conduction through the channel resistance is imposed, avoiding the problem of integral diode recovery time without using external diodes. The control circuit design is discussed. Performance and drawbacks are defined and tested in a series resonant converter.< >
DOI:10.1109/PESC.1991.162709