Scalability of hole mobility enhancement in biaxially strained ultrathin body SOI

The effect of biaxial strain on the valence band structure of ultrathin body (UTB) silicon-on-insulator (SOI) is studied using an sp/sup 3/d/sup 5/s/sup */ tight binding model. In contrast to bulk silicon, where biaxial tensile strain improves hole mobility via band splitting and decreasing the effe...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE electron device letters 2006-05, Vol.27 (5), p.402-404
Hauptverfasser:	Khakifirooz, A., Antoniadis, D.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Band structure biaxial strain Binding Capacitive sensors Carrier confinement Channels Confinement Degradation Effective mass Electronics Exact sciences and technology Hole mobility Insulation Lattices MOSFETs Orientation Scalability Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Silicon on insulator technology Splitting Strain Tensile strain tight binding Transistors ultrathin body silicon-on-insulator (SOI)
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!