Ultra shallow junctions formed by sub-melt laser annealing
Since the requirements for the S/D extensions for future devices become more and more severe with respect to activation and vertical abruptness, a huge effort has been done to develop ultra-fast annealing techniques such as laser annealing. Due to the fact that only the surface layers are heated, th...
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| creator | Falepin, A. Janssens, T. Severi, S. Vandervorst, W. Felch, S.B. Parihar, V. Mayur, A. |
| description | Since the requirements for the S/D extensions for future devices become more and more severe with respect to activation and vertical abruptness, a huge effort has been done to develop ultra-fast annealing techniques such as laser annealing. Due to the fact that only the surface layers are heated, the Si wafer serves as a heat sink. Hence, extremely fast cooling rates can be obtained resulting in a high activation and limited diffusion of the dopants. We present a preliminary study on the activation of n- and p-type junction implants by sub-melt laser annealing. The influence of the pre-amorphization depth, the laser annealing temperature and other process parameters on the activation has been investigated. Sheet resistance and junction depth measurements reveal good activation with minimal diffusion |
| doi_str_mv | 10.1109/RTP.2005.1613687 |
| format | Conference Proceeding |
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Sheet resistance and junction depth measurements reveal good activation with minimal diffusion</description><subject>Annealing</subject><subject>Cooling</subject><subject>Electrical resistance measurement</subject><subject>Heat sinks</subject><subject>Implants</subject><subject>Lattices</subject><subject>Optical materials</subject><subject>Probes</subject><subject>Silicon</subject><subject>Temperature</subject><issn>1944-0251</issn><issn>1944-026X</issn><isbn>078039223X</isbn><isbn>9780780392236</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo9j0tLAzEURoMPsK3uBTf5A1NvnpO4k-ILCoq00F3J40anZGZkMkX67xUsrr7F4Rz4CLlmMGcM7O376m3OAdScaSa0qU_IhFkpK-B6c0qmUBsQlnOxOfsHil2QaSm7X8uClhNyt87j4Gj5dDn333S378LY9F2hqR9ajNQfaNn7qsU80uwKDtR1HbrcdB-X5Dy5XPDquDOyfnxYLZ6r5evTy-J-WTWsVmNlrcLkndbCS-DWOB0Cam7qFKNOJkmvmIxGgA8QfZBJqOhMHTlHG7RRYkZu_roNIm6_hqZ1w2F7_Cx-AHznSVo</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Falepin, A.</creator><creator>Janssens, T.</creator><creator>Severi, S.</creator><creator>Vandervorst, W.</creator><creator>Felch, S.B.</creator><creator>Parihar, V.</creator><creator>Mayur, A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2005</creationdate><title>Ultra shallow junctions formed by sub-melt laser annealing</title><author>Falepin, A. ; Janssens, T. ; Severi, S. ; Vandervorst, W. ; Felch, S.B. ; Parihar, V. ; Mayur, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-995efba663b40298a6cce6287fdd6f8f4b514d830bc0dbc4f35da87d22e9c6853</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Annealing</topic><topic>Cooling</topic><topic>Electrical resistance measurement</topic><topic>Heat sinks</topic><topic>Implants</topic><topic>Lattices</topic><topic>Optical materials</topic><topic>Probes</topic><topic>Silicon</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Falepin, A.</creatorcontrib><creatorcontrib>Janssens, T.</creatorcontrib><creatorcontrib>Severi, S.</creatorcontrib><creatorcontrib>Vandervorst, W.</creatorcontrib><creatorcontrib>Felch, S.B.</creatorcontrib><creatorcontrib>Parihar, V.</creatorcontrib><creatorcontrib>Mayur, A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Falepin, A.</au><au>Janssens, T.</au><au>Severi, S.</au><au>Vandervorst, W.</au><au>Felch, S.B.</au><au>Parihar, V.</au><au>Mayur, A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Ultra shallow junctions formed by sub-melt laser annealing</atitle><btitle>2005 13th International Conference on Advanced Thermal Processing of Semiconductors</btitle><stitle>RTP</stitle><date>2005</date><risdate>2005</risdate><spage>5 pp.</spage><pages>5 pp.-</pages><issn>1944-0251</issn><eissn>1944-026X</eissn><isbn>078039223X</isbn><isbn>9780780392236</isbn><abstract>Since the requirements for the S/D extensions for future devices become more and more severe with respect to activation and vertical abruptness, a huge effort has been done to develop ultra-fast annealing techniques such as laser annealing. 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| identifier | ISSN: 1944-0251 |
| ispartof | 2005 13th International Conference on Advanced Thermal Processing of Semiconductors, 2005, p.5 pp. |
| issn | 1944-0251 1944-026X |
| language | eng |
| recordid | cdi_ieee_primary_1613687 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Annealing Cooling Electrical resistance measurement Heat sinks Implants Lattices Optical materials Probes Silicon Temperature |
| title | Ultra shallow junctions formed by sub-melt laser annealing |
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