Experimental study of the process dependence of Mo, Cr, Ti, and W silicon Schottky diodes and contact resistance

This paper reports on the process dependence and electrical characterization of Schottky diodes and ohmic contacts fabricated on p- and n-type silicon wafers. Four metals are systematically studied using identical test structures and characterization methods: Mo, Ti, W, and Cr. The choice of these m...

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Veröffentlicht in:	IEEE transactions on electron devices 2006-04, Vol.53 (4), p.712-718
Hauptverfasser:	Moselund, K.E., Freiermuth, J.E., Dainesi, P., Ionescu, A.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Applied sciences Barriers Characterization Chromium Compound structure devices Contact resistance Deposition Diodes Electronics Etching Exact sciences and technology Interfaces Metallization Ohmic contacts Radio frequencies RF etching Schottky barriers Schottky diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Silicon Sputtering Testing, measurement, noise and reliability Wafers
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