Base-dopant density variation with emitter size in polysilicon-emitter transistors

Fabrication of polysilicon-emitter bipolar transistors with submicron emitter dimensions leads to diminished arsenic concentration in the emitter polysilicon. As a result, these small transistors are found to have significantly higher base dopant density, lower peak frequency response, and lower bas...

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Bibliographische Detailangaben

Hauptverfasser:	Yun, B.H., Cunningham, B., Snare, J., Barnes, K., Lange, R.C.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Bipolar transistors Current density Degradation Fabrication Frequency measurement Impurities Measurement units Semiconductor device measurement Silicon Surfaces
Online-Zugang:	Volltext bestellen
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