Integrating spiral inductors on 0.25 /spl mu/m epitaxial CMOS process
In this study, different spiral inductor implementations are compared. Q enhancement techniques are also evaluated in minimizing inductor losses on a 0.25 /spl mu/m epitaxial CMOS process. Inductor coupling between adjacent inductors was also considered in this study by measuring the S/sub 21/ param...
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| creator | Hizon, J.R.E. Rosales, M.D. Alarcon, L.P. Sabido, D.J. |
| description | In this study, different spiral inductor implementations are compared. Q enhancement techniques are also evaluated in minimizing inductor losses on a 0.25 /spl mu/m epitaxial CMOS process. Inductor coupling between adjacent inductors was also considered in this study by measuring the S/sub 21/ parameter between the inductors implemented. Reported structures that minimize inductor coupling and layout strategies are explored in reducing coupling. From measured results, octagonal spiral inductors have higher Qs compared to square spirals. Results from the study have shown that patterned ground shields not only improve inductor Q but also limit inductor coupling. In integrating multiple inductors, a diagonal configuration improves isolation by at least 5 dB when compared to a horizontal configuration. |
| doi_str_mv | 10.1109/APMC.2005.1606314 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1606314</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1606314</ieee_id><sourcerecordid>1606314</sourcerecordid><originalsourceid>FETCH-ieee_primary_16063143</originalsourceid><addsrcrecordid>eNp9jrsOgjAYRhsviag8gHHpCwB_aQEZDcHoQDTRwY00WEkNl6aFRN9eBuLodIZzvuRDaEPAJQRib3_JEtcHCFwSQkgJmyDLJ2HgsIjRKVpCtAMaM0rvs5_wowWyjXkBwLAkhFELpaemE6XmnWxKbJTUvMKyefRF12qD2waD6wfYM6rCde_VWCjZ8bccqiQ7X7HSbSGMWaP5k1dG2CNXaHtIb8nRkUKIXGlZc_3Jx6f0v_0Cstc9AQ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Integrating spiral inductors on 0.25 /spl mu/m epitaxial CMOS process</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Hizon, J.R.E. ; Rosales, M.D. ; Alarcon, L.P. ; Sabido, D.J.</creator><creatorcontrib>Hizon, J.R.E. ; Rosales, M.D. ; Alarcon, L.P. ; Sabido, D.J.</creatorcontrib><description>In this study, different spiral inductor implementations are compared. Q enhancement techniques are also evaluated in minimizing inductor losses on a 0.25 /spl mu/m epitaxial CMOS process. Inductor coupling between adjacent inductors was also considered in this study by measuring the S/sub 21/ parameter between the inductors implemented. Reported structures that minimize inductor coupling and layout strategies are explored in reducing coupling. From measured results, octagonal spiral inductors have higher Qs compared to square spirals. Results from the study have shown that patterned ground shields not only improve inductor Q but also limit inductor coupling. In integrating multiple inductors, a diagonal configuration improves isolation by at least 5 dB when compared to a horizontal configuration.</description><identifier>ISSN: 2165-4727</identifier><identifier>ISBN: 078039433X</identifier><identifier>ISBN: 9780780394339</identifier><identifier>EISSN: 2165-4743</identifier><identifier>DOI: 10.1109/APMC.2005.1606314</identifier><language>eng</language><publisher>IEEE</publisher><subject>CMOS process ; CMOS technology ; Couplings ; Equations ; Halo substrate contacts ; Inductor coupling ; Inductors ; Integrated circuit noise ; patterned ground shield(PGS) ; Q factor ; Radio frequency ; Spirals ; Substrates</subject><ispartof>2005 Asia-Pacific Microwave Conference Proceedings, 2005, Vol.1, p.4 pp.</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1606314$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1606314$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Hizon, J.R.E.</creatorcontrib><creatorcontrib>Rosales, M.D.</creatorcontrib><creatorcontrib>Alarcon, L.P.</creatorcontrib><creatorcontrib>Sabido, D.J.</creatorcontrib><title>Integrating spiral inductors on 0.25 /spl mu/m epitaxial CMOS process</title><title>2005 Asia-Pacific Microwave Conference Proceedings</title><addtitle>APMC</addtitle><description>In this study, different spiral inductor implementations are compared. Q enhancement techniques are also evaluated in minimizing inductor losses on a 0.25 /spl mu/m epitaxial CMOS process. Inductor coupling between adjacent inductors was also considered in this study by measuring the S/sub 21/ parameter between the inductors implemented. Reported structures that minimize inductor coupling and layout strategies are explored in reducing coupling. From measured results, octagonal spiral inductors have higher Qs compared to square spirals. Results from the study have shown that patterned ground shields not only improve inductor Q but also limit inductor coupling. In integrating multiple inductors, a diagonal configuration improves isolation by at least 5 dB when compared to a horizontal configuration.</description><subject>CMOS process</subject><subject>CMOS technology</subject><subject>Couplings</subject><subject>Equations</subject><subject>Halo substrate contacts</subject><subject>Inductor coupling</subject><subject>Inductors</subject><subject>Integrated circuit noise</subject><subject>patterned ground shield(PGS)</subject><subject>Q factor</subject><subject>Radio frequency</subject><subject>Spirals</subject><subject>Substrates</subject><issn>2165-4727</issn><issn>2165-4743</issn><isbn>078039433X</isbn><isbn>9780780394339</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jrsOgjAYRhsviag8gHHpCwB_aQEZDcHoQDTRwY00WEkNl6aFRN9eBuLodIZzvuRDaEPAJQRib3_JEtcHCFwSQkgJmyDLJ2HgsIjRKVpCtAMaM0rvs5_wowWyjXkBwLAkhFELpaemE6XmnWxKbJTUvMKyefRF12qD2waD6wfYM6rCde_VWCjZ8bccqiQ7X7HSbSGMWaP5k1dG2CNXaHtIb8nRkUKIXGlZc_3Jx6f0v_0Cstc9AQ</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Hizon, J.R.E.</creator><creator>Rosales, M.D.</creator><creator>Alarcon, L.P.</creator><creator>Sabido, D.J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2005</creationdate><title>Integrating spiral inductors on 0.25 /spl mu/m epitaxial CMOS process</title><author>Hizon, J.R.E. ; Rosales, M.D. ; Alarcon, L.P. ; Sabido, D.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_16063143</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>CMOS process</topic><topic>CMOS technology</topic><topic>Couplings</topic><topic>Equations</topic><topic>Halo substrate contacts</topic><topic>Inductor coupling</topic><topic>Inductors</topic><topic>Integrated circuit noise</topic><topic>patterned ground shield(PGS)</topic><topic>Q factor</topic><topic>Radio frequency</topic><topic>Spirals</topic><topic>Substrates</topic><toplevel>online_resources</toplevel><creatorcontrib>Hizon, J.R.E.</creatorcontrib><creatorcontrib>Rosales, M.D.</creatorcontrib><creatorcontrib>Alarcon, L.P.</creatorcontrib><creatorcontrib>Sabido, D.J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hizon, J.R.E.</au><au>Rosales, M.D.</au><au>Alarcon, L.P.</au><au>Sabido, D.J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Integrating spiral inductors on 0.25 /spl mu/m epitaxial CMOS process</atitle><btitle>2005 Asia-Pacific Microwave Conference Proceedings</btitle><stitle>APMC</stitle><date>2005</date><risdate>2005</risdate><volume>1</volume><spage>4 pp.</spage><pages>4 pp.-</pages><issn>2165-4727</issn><eissn>2165-4743</eissn><isbn>078039433X</isbn><isbn>9780780394339</isbn><abstract>In this study, different spiral inductor implementations are compared. Q enhancement techniques are also evaluated in minimizing inductor losses on a 0.25 /spl mu/m epitaxial CMOS process. Inductor coupling between adjacent inductors was also considered in this study by measuring the S/sub 21/ parameter between the inductors implemented. Reported structures that minimize inductor coupling and layout strategies are explored in reducing coupling. From measured results, octagonal spiral inductors have higher Qs compared to square spirals. Results from the study have shown that patterned ground shields not only improve inductor Q but also limit inductor coupling. In integrating multiple inductors, a diagonal configuration improves isolation by at least 5 dB when compared to a horizontal configuration.</abstract><pub>IEEE</pub><doi>10.1109/APMC.2005.1606314</doi></addata></record> |
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| ispartof | 2005 Asia-Pacific Microwave Conference Proceedings, 2005, Vol.1, p.4 pp. |
| issn | 2165-4727 2165-4743 |
| language | eng |
| recordid | cdi_ieee_primary_1606314 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | CMOS process CMOS technology Couplings Equations Halo substrate contacts Inductor coupling Inductors Integrated circuit noise patterned ground shield(PGS) Q factor Radio frequency Spirals Substrates |
| title | Integrating spiral inductors on 0.25 /spl mu/m epitaxial CMOS process |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T05%3A32%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Integrating%20spiral%20inductors%20on%200.25%20/spl%20mu/m%20epitaxial%20CMOS%20process&rft.btitle=2005%20Asia-Pacific%20Microwave%20Conference%20Proceedings&rft.au=Hizon,%20J.R.E.&rft.date=2005&rft.volume=1&rft.spage=4%20pp.&rft.pages=4%20pp.-&rft.issn=2165-4727&rft.eissn=2165-4743&rft.isbn=078039433X&rft.isbn_list=9780780394339&rft_id=info:doi/10.1109/APMC.2005.1606314&rft_dat=%3Cieee_6IE%3E1606314%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1606314&rfr_iscdi=true |