Development of double-sided silicon strip position sensor
Since double-sided silicon strip sensor provides two-dimensional position information with high resolution, it has been developed in various areas for medical imaging sensor, radiation detector, sensing detector in space science and silicon vertexing/tracking detector in experimental particle physic...
Gespeichert in:
Hauptverfasser: | , , , , , , |
---|---|
Format: | Tagungsbericht |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 785 |
---|---|
container_issue | |
container_start_page | 781 |
container_title | |
container_volume | 2 |
creator | Park, P. Do, S.H. Kah, D.H. Kang, H.D. Kim, D.S. Kim, H.J. Shim, D.H. |
description | Since double-sided silicon strip sensor provides two-dimensional position information with high resolution, it has been developed in various areas for medical imaging sensor, radiation detector, sensing detector in space science and silicon vertexing/tracking detector in experimental particle physics. We designed and fabricated the double-sided silicon position sensor in 5-inch fabrication line. We present measurement results of electrical characteristics of the sensor such as leakage currents and capacitances as function of bias voltages. We also performed beta source test with 90 Sr radioactive source and tested the radiation damage of fabricated sensors with 35 MeV proton beam. The charge collection efficiencies for different sensor designs were measured with laser scanning method |
doi_str_mv | 10.1109/NSSMIC.2005.1596372 |
format | Conference Proceeding |
fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1596372</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1596372</ieee_id><sourcerecordid>1596372</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-78c40e318e63d269082c344cf636ad5384a837f584570d87d8e76975a506be233</originalsourceid><addsrcrecordid>eNotj8tOwzAURC0eEm3hC7rJDzhc-_q5ROFVqcCisK7S-EYySuMoDkj8PUF0NZpZnJlhbC2gFAL87etu97KpSgmgS6G9QSvP2EJqazk46c_ZEqwD9FIKvGALMYccjVZXbJnzJ4AEVGrB_D19U5eGI_VTkdoipK9DRzzHQKHIsYtN6os8jXEohpTjFP8s9TmN1-yyrbtMNyddsY_Hh_fqmW_fnjbV3ZZHYfXErWsUEApHBoM0ft7RzM1Na9DUQaNTtUPbaqe0heBscGSNt7rWYA4kEVds_c-NRLQfxnisx5_96TL-AoLRSA0</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Development of double-sided silicon strip position sensor</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Park, P. ; Do, S.H. ; Kah, D.H. ; Kang, H.D. ; Kim, D.S. ; Kim, H.J. ; Shim, D.H.</creator><creatorcontrib>Park, P. ; Do, S.H. ; Kah, D.H. ; Kang, H.D. ; Kim, D.S. ; Kim, H.J. ; Shim, D.H.</creatorcontrib><description>Since double-sided silicon strip sensor provides two-dimensional position information with high resolution, it has been developed in various areas for medical imaging sensor, radiation detector, sensing detector in space science and silicon vertexing/tracking detector in experimental particle physics. We designed and fabricated the double-sided silicon position sensor in 5-inch fabrication line. We present measurement results of electrical characteristics of the sensor such as leakage currents and capacitances as function of bias voltages. We also performed beta source test with 90 Sr radioactive source and tested the radiation damage of fabricated sensors with 35 MeV proton beam. The charge collection efficiencies for different sensor designs were measured with laser scanning method</description><identifier>ISSN: 1082-3654</identifier><identifier>ISBN: 0780392213</identifier><identifier>ISBN: 9780780392212</identifier><identifier>EISSN: 2577-0829</identifier><identifier>DOI: 10.1109/NSSMIC.2005.1596372</identifier><language>eng</language><publisher>IEEE</publisher><subject>Biomedical imaging ; Current measurement ; Image resolution ; Image sensors ; Particle tracking ; Radiation detectors ; Sensor phenomena and characterization ; Silicon radiation detectors ; Strips ; Testing</subject><ispartof>IEEE Nuclear Science Symposium Conference Record, 2005, 2005, Vol.2, p.781-785</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1596372$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1596372$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Park, P.</creatorcontrib><creatorcontrib>Do, S.H.</creatorcontrib><creatorcontrib>Kah, D.H.</creatorcontrib><creatorcontrib>Kang, H.D.</creatorcontrib><creatorcontrib>Kim, D.S.</creatorcontrib><creatorcontrib>Kim, H.J.</creatorcontrib><creatorcontrib>Shim, D.H.</creatorcontrib><title>Development of double-sided silicon strip position sensor</title><title>IEEE Nuclear Science Symposium Conference Record, 2005</title><addtitle>NSSMIC</addtitle><description>Since double-sided silicon strip sensor provides two-dimensional position information with high resolution, it has been developed in various areas for medical imaging sensor, radiation detector, sensing detector in space science and silicon vertexing/tracking detector in experimental particle physics. We designed and fabricated the double-sided silicon position sensor in 5-inch fabrication line. We present measurement results of electrical characteristics of the sensor such as leakage currents and capacitances as function of bias voltages. We also performed beta source test with 90 Sr radioactive source and tested the radiation damage of fabricated sensors with 35 MeV proton beam. The charge collection efficiencies for different sensor designs were measured with laser scanning method</description><subject>Biomedical imaging</subject><subject>Current measurement</subject><subject>Image resolution</subject><subject>Image sensors</subject><subject>Particle tracking</subject><subject>Radiation detectors</subject><subject>Sensor phenomena and characterization</subject><subject>Silicon radiation detectors</subject><subject>Strips</subject><subject>Testing</subject><issn>1082-3654</issn><issn>2577-0829</issn><isbn>0780392213</isbn><isbn>9780780392212</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8tOwzAURC0eEm3hC7rJDzhc-_q5ROFVqcCisK7S-EYySuMoDkj8PUF0NZpZnJlhbC2gFAL87etu97KpSgmgS6G9QSvP2EJqazk46c_ZEqwD9FIKvGALMYccjVZXbJnzJ4AEVGrB_D19U5eGI_VTkdoipK9DRzzHQKHIsYtN6os8jXEohpTjFP8s9TmN1-yyrbtMNyddsY_Hh_fqmW_fnjbV3ZZHYfXErWsUEApHBoM0ft7RzM1Na9DUQaNTtUPbaqe0heBscGSNt7rWYA4kEVds_c-NRLQfxnisx5_96TL-AoLRSA0</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Park, P.</creator><creator>Do, S.H.</creator><creator>Kah, D.H.</creator><creator>Kang, H.D.</creator><creator>Kim, D.S.</creator><creator>Kim, H.J.</creator><creator>Shim, D.H.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2005</creationdate><title>Development of double-sided silicon strip position sensor</title><author>Park, P. ; Do, S.H. ; Kah, D.H. ; Kang, H.D. ; Kim, D.S. ; Kim, H.J. ; Shim, D.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-78c40e318e63d269082c344cf636ad5384a837f584570d87d8e76975a506be233</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Biomedical imaging</topic><topic>Current measurement</topic><topic>Image resolution</topic><topic>Image sensors</topic><topic>Particle tracking</topic><topic>Radiation detectors</topic><topic>Sensor phenomena and characterization</topic><topic>Silicon radiation detectors</topic><topic>Strips</topic><topic>Testing</topic><toplevel>online_resources</toplevel><creatorcontrib>Park, P.</creatorcontrib><creatorcontrib>Do, S.H.</creatorcontrib><creatorcontrib>Kah, D.H.</creatorcontrib><creatorcontrib>Kang, H.D.</creatorcontrib><creatorcontrib>Kim, D.S.</creatorcontrib><creatorcontrib>Kim, H.J.</creatorcontrib><creatorcontrib>Shim, D.H.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Park, P.</au><au>Do, S.H.</au><au>Kah, D.H.</au><au>Kang, H.D.</au><au>Kim, D.S.</au><au>Kim, H.J.</au><au>Shim, D.H.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Development of double-sided silicon strip position sensor</atitle><btitle>IEEE Nuclear Science Symposium Conference Record, 2005</btitle><stitle>NSSMIC</stitle><date>2005</date><risdate>2005</risdate><volume>2</volume><spage>781</spage><epage>785</epage><pages>781-785</pages><issn>1082-3654</issn><eissn>2577-0829</eissn><isbn>0780392213</isbn><isbn>9780780392212</isbn><abstract>Since double-sided silicon strip sensor provides two-dimensional position information with high resolution, it has been developed in various areas for medical imaging sensor, radiation detector, sensing detector in space science and silicon vertexing/tracking detector in experimental particle physics. We designed and fabricated the double-sided silicon position sensor in 5-inch fabrication line. We present measurement results of electrical characteristics of the sensor such as leakage currents and capacitances as function of bias voltages. We also performed beta source test with 90 Sr radioactive source and tested the radiation damage of fabricated sensors with 35 MeV proton beam. The charge collection efficiencies for different sensor designs were measured with laser scanning method</abstract><pub>IEEE</pub><doi>10.1109/NSSMIC.2005.1596372</doi><tpages>5</tpages></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | ISSN: 1082-3654 |
ispartof | IEEE Nuclear Science Symposium Conference Record, 2005, 2005, Vol.2, p.781-785 |
issn | 1082-3654 2577-0829 |
language | eng |
recordid | cdi_ieee_primary_1596372 |
source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Biomedical imaging Current measurement Image resolution Image sensors Particle tracking Radiation detectors Sensor phenomena and characterization Silicon radiation detectors Strips Testing |
title | Development of double-sided silicon strip position sensor |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T12%3A50%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Development%20of%20double-sided%20silicon%20strip%20position%20sensor&rft.btitle=IEEE%20Nuclear%20Science%20Symposium%20Conference%20Record,%202005&rft.au=Park,%20P.&rft.date=2005&rft.volume=2&rft.spage=781&rft.epage=785&rft.pages=781-785&rft.issn=1082-3654&rft.eissn=2577-0829&rft.isbn=0780392213&rft.isbn_list=9780780392212&rft_id=info:doi/10.1109/NSSMIC.2005.1596372&rft_dat=%3Cieee_6IE%3E1596372%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1596372&rfr_iscdi=true |