Displacement damage effects on the forward bias characteristics of SiC Schottky barrier power diodes
Commercial SiC Schottky barrier power diodes have been subjected to 203 MeV proton irradiation and the effects of the resultant displacement damage on the I-V characteristics have been observed. The diodes show excellent resistance to radiation damage. Changes in forward and reverse bias I-V charact...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on nuclear science 2005-12, Vol.52 (6), p.2408-2412 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 2412 |
|---|---|
| container_issue | 6 |
| container_start_page | 2408 |
| container_title | IEEE transactions on nuclear science |
| container_volume | 52 |
| creator | Harris, R.D. Frasca, A.J. Patton, M.O. |
| description | Commercial SiC Schottky barrier power diodes have been subjected to 203 MeV proton irradiation and the effects of the resultant displacement damage on the I-V characteristics have been observed. The diodes show excellent resistance to radiation damage. Changes in forward and reverse bias I-V characteristics are reported for irradiated 4H SiC commercial Schottky barrier diodes at fluences up to 2.5/spl times/10/sup 14/ p/cm/sup 2/. Small changes are seen in the reverse bias I-V characteristics with the reverse leakage actually decreasing with increasing irradiation fluence. In forward bias, the series resistance is observed to increase as the fluence increases. The changes in series resistance are interpreted as being due to changes in the effective dopant density due to carrier removal by the defects produced. |
| doi_str_mv | 10.1109/TNS.2005.860730 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_1589216</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1589216</ieee_id><sourcerecordid>914644249</sourcerecordid><originalsourceid>FETCH-LOGICAL-c397t-3cae08ccbfdc34f68d0ccab871e06d257161e33b526be2478a69018734eda9a53</originalsourceid><addsrcrecordid>eNp9kc1LAzEQxYMoWKtnD16CBz1tm2yS3eQo9ROKHlrPSzaZtaltU5MU6X9vZAXBg5cZBn7vwZuH0DklI0qJGs-fZ6OSEDGSFakZOUADKoQsqKjlIRoQQmWhuFLH6CTGZT65IGKA7K2L25U2sIZNwlav9Rtg6DowKWK_wWkBuPPhUweLW6cjNgsdtEkQXEzOZKbDMzfBM7PwKb3vcatDcBDw1n_maZ23EE_RUadXEc5-9hC93t_NJ4_F9OXhaXIzLQxTdSqY0UCkMW1nDeNdJS0xRreypkAqW4qaVhQYa0VZtVDyWupK5Vg142C10oIN0XXvuw3-YwcxNWsXDaxWegN-FxtFecV5yVUmr_4lS9k_KIOXf8Cl34VNTpHdqJKqJjJD4x4ywccYoGu2wa112DeUNN_lNLmc5rucpi8nKy56hQOAX1pIVdKKfQGRMosw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>911989708</pqid></control><display><type>article</type><title>Displacement damage effects on the forward bias characteristics of SiC Schottky barrier power diodes</title><source>IEEE Electronic Library (IEL)</source><creator>Harris, R.D. ; Frasca, A.J. ; Patton, M.O.</creator><creatorcontrib>Harris, R.D. ; Frasca, A.J. ; Patton, M.O.</creatorcontrib><description>Commercial SiC Schottky barrier power diodes have been subjected to 203 MeV proton irradiation and the effects of the resultant displacement damage on the I-V characteristics have been observed. The diodes show excellent resistance to radiation damage. Changes in forward and reverse bias I-V characteristics are reported for irradiated 4H SiC commercial Schottky barrier diodes at fluences up to 2.5/spl times/10/sup 14/ p/cm/sup 2/. Small changes are seen in the reverse bias I-V characteristics with the reverse leakage actually decreasing with increasing irradiation fluence. In forward bias, the series resistance is observed to increase as the fluence increases. The changes in series resistance are interpreted as being due to changes in the effective dopant density due to carrier removal by the defects produced.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2005.860730</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Barriers ; Bias ; Current measurement ; Damage ; Density ; Diodes ; Displacement ; Displacement damage ; Electric variables measurement ; Fluence ; Forward contracts ; Instruments ; NASA ; Particle beams ; proton irradiation ; Protons ; Schottky barriers ; Schottky diode ; Schottky diodes ; Silicon carbide</subject><ispartof>IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2408-2412</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c397t-3cae08ccbfdc34f68d0ccab871e06d257161e33b526be2478a69018734eda9a53</citedby><cites>FETCH-LOGICAL-c397t-3cae08ccbfdc34f68d0ccab871e06d257161e33b526be2478a69018734eda9a53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1589216$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1589216$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Harris, R.D.</creatorcontrib><creatorcontrib>Frasca, A.J.</creatorcontrib><creatorcontrib>Patton, M.O.</creatorcontrib><title>Displacement damage effects on the forward bias characteristics of SiC Schottky barrier power diodes</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>Commercial SiC Schottky barrier power diodes have been subjected to 203 MeV proton irradiation and the effects of the resultant displacement damage on the I-V characteristics have been observed. The diodes show excellent resistance to radiation damage. Changes in forward and reverse bias I-V characteristics are reported for irradiated 4H SiC commercial Schottky barrier diodes at fluences up to 2.5/spl times/10/sup 14/ p/cm/sup 2/. Small changes are seen in the reverse bias I-V characteristics with the reverse leakage actually decreasing with increasing irradiation fluence. In forward bias, the series resistance is observed to increase as the fluence increases. The changes in series resistance are interpreted as being due to changes in the effective dopant density due to carrier removal by the defects produced.</description><subject>Barriers</subject><subject>Bias</subject><subject>Current measurement</subject><subject>Damage</subject><subject>Density</subject><subject>Diodes</subject><subject>Displacement</subject><subject>Displacement damage</subject><subject>Electric variables measurement</subject><subject>Fluence</subject><subject>Forward contracts</subject><subject>Instruments</subject><subject>NASA</subject><subject>Particle beams</subject><subject>proton irradiation</subject><subject>Protons</subject><subject>Schottky barriers</subject><subject>Schottky diode</subject><subject>Schottky diodes</subject><subject>Silicon carbide</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc1LAzEQxYMoWKtnD16CBz1tm2yS3eQo9ROKHlrPSzaZtaltU5MU6X9vZAXBg5cZBn7vwZuH0DklI0qJGs-fZ6OSEDGSFakZOUADKoQsqKjlIRoQQmWhuFLH6CTGZT65IGKA7K2L25U2sIZNwlav9Rtg6DowKWK_wWkBuPPhUweLW6cjNgsdtEkQXEzOZKbDMzfBM7PwKb3vcatDcBDw1n_maZ23EE_RUadXEc5-9hC93t_NJ4_F9OXhaXIzLQxTdSqY0UCkMW1nDeNdJS0xRreypkAqW4qaVhQYa0VZtVDyWupK5Vg142C10oIN0XXvuw3-YwcxNWsXDaxWegN-FxtFecV5yVUmr_4lS9k_KIOXf8Cl34VNTpHdqJKqJjJD4x4ywccYoGu2wa112DeUNN_lNLmc5rucpi8nKy56hQOAX1pIVdKKfQGRMosw</recordid><startdate>20051201</startdate><enddate>20051201</enddate><creator>Harris, R.D.</creator><creator>Frasca, A.J.</creator><creator>Patton, M.O.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QL</scope><scope>7QQ</scope><scope>7SC</scope><scope>7SE</scope><scope>7SP</scope><scope>7SR</scope><scope>7T7</scope><scope>7TA</scope><scope>7TB</scope><scope>7U5</scope><scope>7U9</scope><scope>8BQ</scope><scope>8FD</scope><scope>C1K</scope><scope>F28</scope><scope>FR3</scope><scope>H8D</scope><scope>H94</scope><scope>JG9</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>M7N</scope><scope>P64</scope></search><sort><creationdate>20051201</creationdate><title>Displacement damage effects on the forward bias characteristics of SiC Schottky barrier power diodes</title><author>Harris, R.D. ; Frasca, A.J. ; Patton, M.O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c397t-3cae08ccbfdc34f68d0ccab871e06d257161e33b526be2478a69018734eda9a53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Barriers</topic><topic>Bias</topic><topic>Current measurement</topic><topic>Damage</topic><topic>Density</topic><topic>Diodes</topic><topic>Displacement</topic><topic>Displacement damage</topic><topic>Electric variables measurement</topic><topic>Fluence</topic><topic>Forward contracts</topic><topic>Instruments</topic><topic>NASA</topic><topic>Particle beams</topic><topic>proton irradiation</topic><topic>Protons</topic><topic>Schottky barriers</topic><topic>Schottky diode</topic><topic>Schottky diodes</topic><topic>Silicon carbide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Harris, R.D.</creatorcontrib><creatorcontrib>Frasca, A.J.</creatorcontrib><creatorcontrib>Patton, M.O.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Industrial and Applied Microbiology Abstracts (Microbiology A)</collection><collection>Materials Business File</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Virology and AIDS Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>AIDS and Cancer Research Abstracts</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Algology Mycology and Protozoology Abstracts (Microbiology C)</collection><collection>Biotechnology and BioEngineering Abstracts</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Harris, R.D.</au><au>Frasca, A.J.</au><au>Patton, M.O.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Displacement damage effects on the forward bias characteristics of SiC Schottky barrier power diodes</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2005-12-01</date><risdate>2005</risdate><volume>52</volume><issue>6</issue><spage>2408</spage><epage>2412</epage><pages>2408-2412</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>Commercial SiC Schottky barrier power diodes have been subjected to 203 MeV proton irradiation and the effects of the resultant displacement damage on the I-V characteristics have been observed. The diodes show excellent resistance to radiation damage. Changes in forward and reverse bias I-V characteristics are reported for irradiated 4H SiC commercial Schottky barrier diodes at fluences up to 2.5/spl times/10/sup 14/ p/cm/sup 2/. Small changes are seen in the reverse bias I-V characteristics with the reverse leakage actually decreasing with increasing irradiation fluence. In forward bias, the series resistance is observed to increase as the fluence increases. The changes in series resistance are interpreted as being due to changes in the effective dopant density due to carrier removal by the defects produced.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2005.860730</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9499 |
| ispartof | IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2408-2412 |
| issn | 0018-9499 1558-1578 |
| language | eng |
| recordid | cdi_ieee_primary_1589216 |
| source | IEEE Electronic Library (IEL) |
| subjects | Barriers Bias Current measurement Damage Density Diodes Displacement Displacement damage Electric variables measurement Fluence Forward contracts Instruments NASA Particle beams proton irradiation Protons Schottky barriers Schottky diode Schottky diodes Silicon carbide |
| title | Displacement damage effects on the forward bias characteristics of SiC Schottky barrier power diodes |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T04%3A53%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Displacement%20damage%20effects%20on%20the%20forward%20bias%20characteristics%20of%20SiC%20Schottky%20barrier%20power%20diodes&rft.jtitle=IEEE%20transactions%20on%20nuclear%20science&rft.au=Harris,%20R.D.&rft.date=2005-12-01&rft.volume=52&rft.issue=6&rft.spage=2408&rft.epage=2412&rft.pages=2408-2412&rft.issn=0018-9499&rft.eissn=1558-1578&rft.coden=IETNAE&rft_id=info:doi/10.1109/TNS.2005.860730&rft_dat=%3Cproquest_RIE%3E914644249%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=911989708&rft_id=info:pmid/&rft_ieee_id=1589216&rfr_iscdi=true |