Focused ion beam-based fabrication of nanostructured photonic devices
This paper presents results for focused ion beam (FIB) processing of two photonic devices: 1) a GaN laser with a fourth-order grating for vertical emission, and 2) a two-dimensional (2-D) photonic crystal (PhC) structure. For the GaN laser, both L-I and I-V results are shown before and after etching...
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| Veröffentlicht in: | IEEE journal of selected topics in quantum electronics 2005-11, Vol.11 (6), p.1266-1277 |
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| container_title | IEEE journal of selected topics in quantum electronics |
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| creator | Cryan, M.J. Hill, M. Sanz, D.C. Ivanov, P.S. Heard, P.J. Tian, L. Siyuan Yu Rorison, J.M. |
| description | This paper presents results for focused ion beam (FIB) processing of two photonic devices: 1) a GaN laser with a fourth-order grating for vertical emission, and 2) a two-dimensional (2-D) photonic crystal (PhC) structure. For the GaN laser, both L-I and I-V results are shown before and after etching, and vertical emitted power as a function of the distance along grating is shown. A finite element (FE)-based electromagnetic model is developed to support the measured results and is used to predict the optimum grating depth. For the 2-D photonic crystal, direct FIB etching is used to create a PhC in a standard InP waveguide structure. Measured and modeled transmission results are compared, and there is good agreement for band edge position. A detailed study of hole shape is presented, and this leads to the development of a multistage etching procedure involving both reactive ion etching and inductively coupled plasma etching. This results in a much improved hole shape. |
| doi_str_mv | 10.1109/JSTQE.2005.860990 |
| format | Article |
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For the GaN laser, both L-I and I-V results are shown before and after etching, and vertical emitted power as a function of the distance along grating is shown. A finite element (FE)-based electromagnetic model is developed to support the measured results and is used to predict the optimum grating depth. For the 2-D photonic crystal, direct FIB etching is used to create a PhC in a standard InP waveguide structure. Measured and modeled transmission results are compared, and there is good agreement for band edge position. A detailed study of hole shape is presented, and this leads to the development of a multistage etching procedure involving both reactive ion etching and inductively coupled plasma etching. This results in a much improved hole shape.</description><identifier>ISSN: 1077-260X</identifier><identifier>EISSN: 1558-4542</identifier><identifier>DOI: 10.1109/JSTQE.2005.860990</identifier><identifier>CODEN: IJSQEN</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Devices ; Electromagnetic measurements ; Etching ; Focused ion beam (FIB) ; Gallium nitride ; Gallium nitrides ; Gratings ; Ion beams ; Lasers ; Mathematical models ; Nanoscale devices ; Nanostructure ; Optical device fabrication ; Photonic crystals ; photonic crystals (PhCs) ; Photonics ; Plasma etching ; Plasma measurements ; Shape</subject><ispartof>IEEE journal of selected topics in quantum electronics, 2005-11, Vol.11 (6), p.1266-1277</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-4a71ffa992267e3902c070d2dc0d0d5d0904f24f4d7ce398c3658083f53ada213</citedby><cites>FETCH-LOGICAL-c355t-4a71ffa992267e3902c070d2dc0d0d5d0904f24f4d7ce398c3658083f53ada213</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1583642$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1583642$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Cryan, M.J.</creatorcontrib><creatorcontrib>Hill, M.</creatorcontrib><creatorcontrib>Sanz, D.C.</creatorcontrib><creatorcontrib>Ivanov, P.S.</creatorcontrib><creatorcontrib>Heard, P.J.</creatorcontrib><creatorcontrib>Tian, L.</creatorcontrib><creatorcontrib>Siyuan Yu</creatorcontrib><creatorcontrib>Rorison, J.M.</creatorcontrib><title>Focused ion beam-based fabrication of nanostructured photonic devices</title><title>IEEE journal of selected topics in quantum electronics</title><addtitle>JSTQE</addtitle><description>This paper presents results for focused ion beam (FIB) processing of two photonic devices: 1) a GaN laser with a fourth-order grating for vertical emission, and 2) a two-dimensional (2-D) photonic crystal (PhC) structure. For the GaN laser, both L-I and I-V results are shown before and after etching, and vertical emitted power as a function of the distance along grating is shown. A finite element (FE)-based electromagnetic model is developed to support the measured results and is used to predict the optimum grating depth. For the 2-D photonic crystal, direct FIB etching is used to create a PhC in a standard InP waveguide structure. Measured and modeled transmission results are compared, and there is good agreement for band edge position. A detailed study of hole shape is presented, and this leads to the development of a multistage etching procedure involving both reactive ion etching and inductively coupled plasma etching. This results in a much improved hole shape.</description><subject>Devices</subject><subject>Electromagnetic measurements</subject><subject>Etching</subject><subject>Focused ion beam (FIB)</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>Gratings</subject><subject>Ion beams</subject><subject>Lasers</subject><subject>Mathematical models</subject><subject>Nanoscale devices</subject><subject>Nanostructure</subject><subject>Optical device fabrication</subject><subject>Photonic crystals</subject><subject>photonic crystals (PhCs)</subject><subject>Photonics</subject><subject>Plasma etching</subject><subject>Plasma measurements</subject><subject>Shape</subject><issn>1077-260X</issn><issn>1558-4542</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kEtLAzEUhYMoWKs_QNwMLnQ19SaTTJKlSOuDgogV3IU0D5zSTmoyI_jvzVhBcOHqPs53LtyD0CmGCcYgrx6eF0_TCQFgE1GDlLCHRpgxUVJGyX7ugfOS1PB6iI5SWgGAoAJGaDoLpk_OFk1oi6XTm3Kph9HrZWyM7oZ18EWr25C62Juuj1ndvoUutI0prPtojEvH6MDrdXInP3WMXmbTxc1dOX-8vb-5npemYqwrqebYey0lITV3lQRigIMl1oAFyyxIoJ5QTy03WRamqpkAUXlWaasJrsbocnd3G8N771KnNk0ybr3WrQt9UkLWBBjOljG6-JckAgjjWGbw_A-4Cn1s8xdKYiw5z1yG8A4yMaQUnVfb2Gx0_FQY1JC_-s5fDfmrXf7Zc7bzNM65X56Jqqak-gJYuYCB</recordid><startdate>20051101</startdate><enddate>20051101</enddate><creator>Cryan, M.J.</creator><creator>Hill, M.</creator><creator>Sanz, D.C.</creator><creator>Ivanov, P.S.</creator><creator>Heard, P.J.</creator><creator>Tian, L.</creator><creator>Siyuan Yu</creator><creator>Rorison, J.M.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20051101</creationdate><title>Focused ion beam-based fabrication of nanostructured photonic devices</title><author>Cryan, M.J. ; Hill, M. ; Sanz, D.C. ; Ivanov, P.S. ; Heard, P.J. ; Tian, L. ; Siyuan Yu ; Rorison, J.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-4a71ffa992267e3902c070d2dc0d0d5d0904f24f4d7ce398c3658083f53ada213</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Devices</topic><topic>Electromagnetic measurements</topic><topic>Etching</topic><topic>Focused ion beam (FIB)</topic><topic>Gallium nitride</topic><topic>Gallium nitrides</topic><topic>Gratings</topic><topic>Ion beams</topic><topic>Lasers</topic><topic>Mathematical models</topic><topic>Nanoscale devices</topic><topic>Nanostructure</topic><topic>Optical device fabrication</topic><topic>Photonic crystals</topic><topic>photonic crystals (PhCs)</topic><topic>Photonics</topic><topic>Plasma etching</topic><topic>Plasma measurements</topic><topic>Shape</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cryan, M.J.</creatorcontrib><creatorcontrib>Hill, M.</creatorcontrib><creatorcontrib>Sanz, D.C.</creatorcontrib><creatorcontrib>Ivanov, P.S.</creatorcontrib><creatorcontrib>Heard, P.J.</creatorcontrib><creatorcontrib>Tian, L.</creatorcontrib><creatorcontrib>Siyuan Yu</creatorcontrib><creatorcontrib>Rorison, J.M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE journal of selected topics in quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Cryan, M.J.</au><au>Hill, M.</au><au>Sanz, D.C.</au><au>Ivanov, P.S.</au><au>Heard, P.J.</au><au>Tian, L.</au><au>Siyuan Yu</au><au>Rorison, J.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Focused ion beam-based fabrication of nanostructured photonic devices</atitle><jtitle>IEEE journal of selected topics in quantum electronics</jtitle><stitle>JSTQE</stitle><date>2005-11-01</date><risdate>2005</risdate><volume>11</volume><issue>6</issue><spage>1266</spage><epage>1277</epage><pages>1266-1277</pages><issn>1077-260X</issn><eissn>1558-4542</eissn><coden>IJSQEN</coden><abstract>This paper presents results for focused ion beam (FIB) processing of two photonic devices: 1) a GaN laser with a fourth-order grating for vertical emission, and 2) a two-dimensional (2-D) photonic crystal (PhC) structure. 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| source | IEEE Electronic Library (IEL) |
| subjects | Devices Electromagnetic measurements Etching Focused ion beam (FIB) Gallium nitride Gallium nitrides Gratings Ion beams Lasers Mathematical models Nanoscale devices Nanostructure Optical device fabrication Photonic crystals photonic crystals (PhCs) Photonics Plasma etching Plasma measurements Shape |
| title | Focused ion beam-based fabrication of nanostructured photonic devices |
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