Models of nanoelectronic devices on single-electron, resonant tunneling effects and quantum wires for nano and microsystem equipment
The models of nanoelectronic devices on single-electron tunneling, resonant tunneling effects and quantum wires are described. These models have been included into a new version of nanoelectronic device simulator NANODEV for PC. New models allow to simulate other devices including more complex struc...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 622 Vol. 2 |
|---|---|
| container_issue | |
| container_start_page | 621 |
| container_title | |
| container_volume | 2 |
| creator | Abramov, I.I. Abramov, K.I. Goncharenko, I.A. Ignatenko, S.A. Kazantsev, A.P. Kolomejtseva, N.V. Lavrinovich, A.M. Pavlenok, S.N. Strogova, A.S. |
| description | The models of nanoelectronic devices on single-electron tunneling, resonant tunneling effects and quantum wires are described. These models have been included into a new version of nanoelectronic device simulator NANODEV for PC. New models allow to simulate other devices including more complex structures. Principles of simulator design have been left without change. At present, we use several formalisms such formalism of wave functions, formalism of scattering matrix and formalism of Wigner function. For each class of nanoelectronic devices, different hierarchy models can be used. The principles allow to realize modification of the system in order to increase its possibilities |
| doi_str_mv | 10.1109/CRMICO.2005.1565063 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1565063</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1565063</ieee_id><sourcerecordid>1565063</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-df096b8e50feb84e15f17cb616895567ec6df7442332dc75ff1502108174af4f3</originalsourceid><addsrcrecordid>eNo10MtKw0AYBeABEdTaJ-hmHsDEf5LMbSnBS6GlIN2XdPKPjCQzbSZRuvfBHWpdncV3OItDyIJBzhjox_p9vaw3eQHAc8YFB1FekTsthNRCKahuyDzGTwBgWshS8Vvysw4tdpEGS33jA3ZoxiF4Z2iLX85gEk-j8x8dZv_4QAeMIdVHOk7eY5eYorVJI218S49Tsqmn3y4VqQ3DeftMvTNDiKc4Yk_xOLlDj368J9e26SLOLzkj25fnbf2WrTavy_pplTkNY9Za0GKvkIPFvaqQccuk2QsmlOZcSDSitbKqirIsWiO5tYxDwUAxWTW2suWMLP5mHSLuDoPrm-G0u_xU_gI-gGJD</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Models of nanoelectronic devices on single-electron, resonant tunneling effects and quantum wires for nano and microsystem equipment</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Abramov, I.I. ; Abramov, K.I. ; Goncharenko, I.A. ; Ignatenko, S.A. ; Kazantsev, A.P. ; Kolomejtseva, N.V. ; Lavrinovich, A.M. ; Pavlenok, S.N. ; Strogova, A.S.</creator><creatorcontrib>Abramov, I.I. ; Abramov, K.I. ; Goncharenko, I.A. ; Ignatenko, S.A. ; Kazantsev, A.P. ; Kolomejtseva, N.V. ; Lavrinovich, A.M. ; Pavlenok, S.N. ; Strogova, A.S.</creatorcontrib><description>The models of nanoelectronic devices on single-electron tunneling, resonant tunneling effects and quantum wires are described. These models have been included into a new version of nanoelectronic device simulator NANODEV for PC. New models allow to simulate other devices including more complex structures. Principles of simulator design have been left without change. At present, we use several formalisms such formalism of wave functions, formalism of scattering matrix and formalism of Wigner function. For each class of nanoelectronic devices, different hierarchy models can be used. The principles allow to realize modification of the system in order to increase its possibilities</description><identifier>ISBN: 9667968804</identifier><identifier>ISBN: 9789667968809</identifier><identifier>DOI: 10.1109/CRMICO.2005.1565063</identifier><language>eng</language><publisher>IEEE</publisher><subject>Equations ; Helium ; IEEE catalog ; Instruments ; Microwave technology ; Nanoscale devices ; NASA ; Organizing ; Resonant tunneling devices ; Wires</subject><ispartof>2005 15th International Crimean Conference Microwave & Telecommunication Technology, 2005, Vol.2, p.621-622 Vol. 2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1565063$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1565063$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Abramov, I.I.</creatorcontrib><creatorcontrib>Abramov, K.I.</creatorcontrib><creatorcontrib>Goncharenko, I.A.</creatorcontrib><creatorcontrib>Ignatenko, S.A.</creatorcontrib><creatorcontrib>Kazantsev, A.P.</creatorcontrib><creatorcontrib>Kolomejtseva, N.V.</creatorcontrib><creatorcontrib>Lavrinovich, A.M.</creatorcontrib><creatorcontrib>Pavlenok, S.N.</creatorcontrib><creatorcontrib>Strogova, A.S.</creatorcontrib><title>Models of nanoelectronic devices on single-electron, resonant tunneling effects and quantum wires for nano and microsystem equipment</title><title>2005 15th International Crimean Conference Microwave & Telecommunication Technology</title><addtitle>CRMICO</addtitle><description>The models of nanoelectronic devices on single-electron tunneling, resonant tunneling effects and quantum wires are described. These models have been included into a new version of nanoelectronic device simulator NANODEV for PC. New models allow to simulate other devices including more complex structures. Principles of simulator design have been left without change. At present, we use several formalisms such formalism of wave functions, formalism of scattering matrix and formalism of Wigner function. For each class of nanoelectronic devices, different hierarchy models can be used. The principles allow to realize modification of the system in order to increase its possibilities</description><subject>Equations</subject><subject>Helium</subject><subject>IEEE catalog</subject><subject>Instruments</subject><subject>Microwave technology</subject><subject>Nanoscale devices</subject><subject>NASA</subject><subject>Organizing</subject><subject>Resonant tunneling devices</subject><subject>Wires</subject><isbn>9667968804</isbn><isbn>9789667968809</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo10MtKw0AYBeABEdTaJ-hmHsDEf5LMbSnBS6GlIN2XdPKPjCQzbSZRuvfBHWpdncV3OItDyIJBzhjox_p9vaw3eQHAc8YFB1FekTsthNRCKahuyDzGTwBgWshS8Vvysw4tdpEGS33jA3ZoxiF4Z2iLX85gEk-j8x8dZv_4QAeMIdVHOk7eY5eYorVJI218S49Tsqmn3y4VqQ3DeftMvTNDiKc4Yk_xOLlDj368J9e26SLOLzkj25fnbf2WrTavy_pplTkNY9Za0GKvkIPFvaqQccuk2QsmlOZcSDSitbKqirIsWiO5tYxDwUAxWTW2suWMLP5mHSLuDoPrm-G0u_xU_gI-gGJD</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Abramov, I.I.</creator><creator>Abramov, K.I.</creator><creator>Goncharenko, I.A.</creator><creator>Ignatenko, S.A.</creator><creator>Kazantsev, A.P.</creator><creator>Kolomejtseva, N.V.</creator><creator>Lavrinovich, A.M.</creator><creator>Pavlenok, S.N.</creator><creator>Strogova, A.S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2005</creationdate><title>Models of nanoelectronic devices on single-electron, resonant tunneling effects and quantum wires for nano and microsystem equipment</title><author>Abramov, I.I. ; Abramov, K.I. ; Goncharenko, I.A. ; Ignatenko, S.A. ; Kazantsev, A.P. ; Kolomejtseva, N.V. ; Lavrinovich, A.M. ; Pavlenok, S.N. ; Strogova, A.S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-df096b8e50feb84e15f17cb616895567ec6df7442332dc75ff1502108174af4f3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Equations</topic><topic>Helium</topic><topic>IEEE catalog</topic><topic>Instruments</topic><topic>Microwave technology</topic><topic>Nanoscale devices</topic><topic>NASA</topic><topic>Organizing</topic><topic>Resonant tunneling devices</topic><topic>Wires</topic><toplevel>online_resources</toplevel><creatorcontrib>Abramov, I.I.</creatorcontrib><creatorcontrib>Abramov, K.I.</creatorcontrib><creatorcontrib>Goncharenko, I.A.</creatorcontrib><creatorcontrib>Ignatenko, S.A.</creatorcontrib><creatorcontrib>Kazantsev, A.P.</creatorcontrib><creatorcontrib>Kolomejtseva, N.V.</creatorcontrib><creatorcontrib>Lavrinovich, A.M.</creatorcontrib><creatorcontrib>Pavlenok, S.N.</creatorcontrib><creatorcontrib>Strogova, A.S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Abramov, I.I.</au><au>Abramov, K.I.</au><au>Goncharenko, I.A.</au><au>Ignatenko, S.A.</au><au>Kazantsev, A.P.</au><au>Kolomejtseva, N.V.</au><au>Lavrinovich, A.M.</au><au>Pavlenok, S.N.</au><au>Strogova, A.S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Models of nanoelectronic devices on single-electron, resonant tunneling effects and quantum wires for nano and microsystem equipment</atitle><btitle>2005 15th International Crimean Conference Microwave & Telecommunication Technology</btitle><stitle>CRMICO</stitle><date>2005</date><risdate>2005</risdate><volume>2</volume><spage>621</spage><epage>622 Vol. 2</epage><pages>621-622 Vol. 2</pages><isbn>9667968804</isbn><isbn>9789667968809</isbn><abstract>The models of nanoelectronic devices on single-electron tunneling, resonant tunneling effects and quantum wires are described. These models have been included into a new version of nanoelectronic device simulator NANODEV for PC. New models allow to simulate other devices including more complex structures. Principles of simulator design have been left without change. At present, we use several formalisms such formalism of wave functions, formalism of scattering matrix and formalism of Wigner function. For each class of nanoelectronic devices, different hierarchy models can be used. The principles allow to realize modification of the system in order to increase its possibilities</abstract><pub>IEEE</pub><doi>10.1109/CRMICO.2005.1565063</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 9667968804 |
| ispartof | 2005 15th International Crimean Conference Microwave & Telecommunication Technology, 2005, Vol.2, p.621-622 Vol. 2 |
| issn | |
| language | eng |
| recordid | cdi_ieee_primary_1565063 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Equations Helium IEEE catalog Instruments Microwave technology Nanoscale devices NASA Organizing Resonant tunneling devices Wires |
| title | Models of nanoelectronic devices on single-electron, resonant tunneling effects and quantum wires for nano and microsystem equipment |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-11T20%3A22%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Models%20of%20nanoelectronic%20devices%20on%20single-electron,%20resonant%20tunneling%20effects%20and%20quantum%20wires%20for%20nano%20and%20microsystem%20equipment&rft.btitle=2005%2015th%20International%20Crimean%20Conference%20Microwave%20&%20Telecommunication%20Technology&rft.au=Abramov,%20I.I.&rft.date=2005&rft.volume=2&rft.spage=621&rft.epage=622%20Vol.%202&rft.pages=621-622%20Vol.%202&rft.isbn=9667968804&rft.isbn_list=9789667968809&rft_id=info:doi/10.1109/CRMICO.2005.1565063&rft_dat=%3Cieee_6IE%3E1565063%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1565063&rfr_iscdi=true |