Estimation of deep levels effect on recovery time of low noise amplifiers under power pulse
Typical depths and rechargeable times for deep levels in low noise field effect transistors under the power pulse depending on f transistor parameters, pulse amplitude, electron capture cross-section have been estimated. Based on this estimations and experimental date, including measured noise figur...
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| creator | Baranov, I.A. Klimova, A.V. Manchenko, L.V. Obrezan, O.I. Pashkovskii, A.B. |
| description | Typical depths and rechargeable times for deep levels in low noise field effect transistors under the power pulse depending on f transistor parameters, pulse amplitude, electron capture cross-section have been estimated. Based on this estimations and experimental date, including measured noise figure and associated gain of typical transistors, the parasitical buffer layer conductance effect on performance of low noise amplifier with bipolar power supply and unipolar power supply has been analyzed. It is shown that noise figure of amplifier under power pulse can be increased twice for bipolar power supply and tree times for unipolar power supply |
| doi_str_mv | 10.1109/CRMICO.2005.1564998 |
| format | Conference Proceeding |
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Based on this estimations and experimental date, including measured noise figure and associated gain of typical transistors, the parasitical buffer layer conductance effect on performance of low noise amplifier with bipolar power supply and unipolar power supply has been analyzed. It is shown that noise figure of amplifier under power pulse can be increased twice for bipolar power supply and tree times for unipolar power supply</description><identifier>ISBN: 9667968804</identifier><identifier>ISBN: 9789667968809</identifier><identifier>DOI: 10.1109/CRMICO.2005.1564998</identifier><language>eng</language><publisher>IEEE</publisher><subject>Amplitude estimation ; FETs ; Low-noise amplifiers ; Noise figure ; Noise level ; Power measurement ; Power supplies ; Pulse amplifiers ; Pulsed power supplies ; Radioactive decay</subject><ispartof>2005 15th International Crimean Conference Microwave & Telecommunication Technology, 2005, Vol.2, p.476-477 Vol. 2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1564998$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1564998$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Baranov, I.A.</creatorcontrib><creatorcontrib>Klimova, A.V.</creatorcontrib><creatorcontrib>Manchenko, L.V.</creatorcontrib><creatorcontrib>Obrezan, O.I.</creatorcontrib><creatorcontrib>Pashkovskii, A.B.</creatorcontrib><title>Estimation of deep levels effect on recovery time of low noise amplifiers under power pulse</title><title>2005 15th International Crimean Conference Microwave & Telecommunication Technology</title><addtitle>CRMICO</addtitle><description>Typical depths and rechargeable times for deep levels in low noise field effect transistors under the power pulse depending on f transistor parameters, pulse amplitude, electron capture cross-section have been estimated. Based on this estimations and experimental date, including measured noise figure and associated gain of typical transistors, the parasitical buffer layer conductance effect on performance of low noise amplifier with bipolar power supply and unipolar power supply has been analyzed. It is shown that noise figure of amplifier under power pulse can be increased twice for bipolar power supply and tree times for unipolar power supply</description><subject>Amplitude estimation</subject><subject>FETs</subject><subject>Low-noise amplifiers</subject><subject>Noise figure</subject><subject>Noise level</subject><subject>Power measurement</subject><subject>Power supplies</subject><subject>Pulse amplifiers</subject><subject>Pulsed power supplies</subject><subject>Radioactive decay</subject><isbn>9667968804</isbn><isbn>9789667968809</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj81qwzAQhAWl0DbNE-SiF3C6qq2fPRaTtoGUQMmthyDLK1BxLCM5CXn7OjSXmcN8DDOMLQQshQB8qb-_1vV2-Qogl0KqCtHcsSdUSqMyBqoHNs_5FwAEKl0a-ch-VnkMBzuG2PPoeUs08I5O1GVO3pMb-RQkcvFE6cInlK5YF8-8jyETt4ehCz5QyvzYt5T4EM9XPXaZntm9t5PPbz5ju_fVrv4sNtuPdf22KQLCWBDaaacwaLUlZY3w4CSC1t5o02jrGy0bhaXWTpNGYYUU0Cp0lZCO2rKcscV_bSCi_ZCmO-myv90v_wDzXVIy</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Baranov, I.A.</creator><creator>Klimova, A.V.</creator><creator>Manchenko, L.V.</creator><creator>Obrezan, O.I.</creator><creator>Pashkovskii, A.B.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2005</creationdate><title>Estimation of deep levels effect on recovery time of low noise amplifiers under power pulse</title><author>Baranov, I.A. ; Klimova, A.V. ; Manchenko, L.V. ; Obrezan, O.I. ; Pashkovskii, A.B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-e9a499189a7ae6a81f0c59077f878b7afb75b69377c7e791a1510d69c415ced33</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Amplitude estimation</topic><topic>FETs</topic><topic>Low-noise amplifiers</topic><topic>Noise figure</topic><topic>Noise level</topic><topic>Power measurement</topic><topic>Power supplies</topic><topic>Pulse amplifiers</topic><topic>Pulsed power supplies</topic><topic>Radioactive decay</topic><toplevel>online_resources</toplevel><creatorcontrib>Baranov, I.A.</creatorcontrib><creatorcontrib>Klimova, A.V.</creatorcontrib><creatorcontrib>Manchenko, L.V.</creatorcontrib><creatorcontrib>Obrezan, O.I.</creatorcontrib><creatorcontrib>Pashkovskii, A.B.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Baranov, I.A.</au><au>Klimova, A.V.</au><au>Manchenko, L.V.</au><au>Obrezan, O.I.</au><au>Pashkovskii, A.B.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Estimation of deep levels effect on recovery time of low noise amplifiers under power pulse</atitle><btitle>2005 15th International Crimean Conference Microwave & Telecommunication Technology</btitle><stitle>CRMICO</stitle><date>2005</date><risdate>2005</risdate><volume>2</volume><spage>476</spage><epage>477 Vol. 2</epage><pages>476-477 Vol. 2</pages><isbn>9667968804</isbn><isbn>9789667968809</isbn><abstract>Typical depths and rechargeable times for deep levels in low noise field effect transistors under the power pulse depending on f transistor parameters, pulse amplitude, electron capture cross-section have been estimated. Based on this estimations and experimental date, including measured noise figure and associated gain of typical transistors, the parasitical buffer layer conductance effect on performance of low noise amplifier with bipolar power supply and unipolar power supply has been analyzed. It is shown that noise figure of amplifier under power pulse can be increased twice for bipolar power supply and tree times for unipolar power supply</abstract><pub>IEEE</pub><doi>10.1109/CRMICO.2005.1564998</doi></addata></record> |
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| ispartof | 2005 15th International Crimean Conference Microwave & Telecommunication Technology, 2005, Vol.2, p.476-477 Vol. 2 |
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| language | eng |
| recordid | cdi_ieee_primary_1564998 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Amplitude estimation FETs Low-noise amplifiers Noise figure Noise level Power measurement Power supplies Pulse amplifiers Pulsed power supplies Radioactive decay |
| title | Estimation of deep levels effect on recovery time of low noise amplifiers under power pulse |
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