A new dose rate model for SOI MOSFETs and its implementation in SPICE

A new dose rate model for SOI MOSFETs and its implementation in SPICE

A new SPICE based dose rate model is proposed for SOI MOSFETs, which accounts for collections of excess carriers by both source/body and drain/body junctions. It is also identified that the parasitic bipolar transistor does not play a significant role within the range of dose rate of interest. An im...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Liu, H.Y., Golke, K.W., Liu, S.T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bipolar transistors
Charge carrier processes
Circuits
Diodes
Equations
MOS devices
MOSFETs
P-n junctions
Photoconductivity
SPICE
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A new SPICE based dose rate model is proposed for SOI MOSFETs, which accounts for collections of excess carriers by both source/body and drain/body junctions. It is also identified that the parasitic bipolar transistor does not play a significant role within the range of dose rate of interest. An implementation method for circuit level simulation is described. The validity of this model has been verified by test results.
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.2005.1563556