Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETs

Abstract-Strain is recognized as one of the key technology features to increase the drive current in scaled MOS devices. We present a Monte Carlo simulation study for introducing dopants into a strained Si/Si 1-x Ge x system at very low energies. The lattice constant in the epitaxial growth directio...

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Bibliographische Detailangaben

Hauptverfasser:	Wittmann, R., Hossinger, A., Selberherr, S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Boron Doping profiles Epitaxial growth Implants Ion implantation Lattices MOS devices MOSFETs Predictive models Silicon
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