Phase noise performance comparison between LIGA-MEMS and on-chip CMOS capacitors for a VCO application
An integrated voltage-controlled oscillator using TSMC 0.18 mum CMOS technology is presented to demonstrate and compare the phase noise performance between the VCO using a new type of MEMS variable capacitor and that using conventional CMOS varactor, which is built on-chip together with the CMOS VCO...
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| creator | Fang, L. Klymyshyn, D. Dinh, A. Haluzan, D. Achenbach, S. |
| description | An integrated voltage-controlled oscillator using TSMC 0.18 mum CMOS technology is presented to demonstrate and compare the phase noise performance between the VCO using a new type of MEMS variable capacitor and that using conventional CMOS varactor, which is built on-chip together with the CMOS VCO. A representative MEMS variable capacitor, fabricated using the LIGA process, has a nominal capacitance of 1.05 pF and exhibits a Q factor of 40.9 at 2.7 GHz. The simulation results show that with this LIGA-MEMS capacitor, a 4.3 dB of phase noise improvement at 300 kHz offset from the carrier is achieved when the VCO operates at 2.7 GHz |
| doi_str_mv | 10.1109/CCECE.2005.1556962 |
| format | Conference Proceeding |
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A representative MEMS variable capacitor, fabricated using the LIGA process, has a nominal capacitance of 1.05 pF and exhibits a Q factor of 40.9 at 2.7 GHz. The simulation results show that with this LIGA-MEMS capacitor, a 4.3 dB of phase noise improvement at 300 kHz offset from the carrier is achieved when the VCO operates at 2.7 GHz</description><identifier>ISSN: 0840-7789</identifier><identifier>ISBN: 0780388852</identifier><identifier>ISBN: 9780780388857</identifier><identifier>EISSN: 2576-7046</identifier><identifier>DOI: 10.1109/CCECE.2005.1556962</identifier><language>eng</language><publisher>IEEE</publisher><subject>Capacitance ; Capacitors ; CMOS technology ; Electrodes ; Frequency ; Micromechanical devices ; Phase noise ; Q factor ; Varactors ; Voltage-controlled oscillators</subject><ispartof>Canadian Conference on Electrical and Computer Engineering, 2005, 2005, p.425-428</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1556962$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1556962$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Fang, L.</creatorcontrib><creatorcontrib>Klymyshyn, D.</creatorcontrib><creatorcontrib>Dinh, A.</creatorcontrib><creatorcontrib>Haluzan, D.</creatorcontrib><creatorcontrib>Achenbach, S.</creatorcontrib><title>Phase noise performance comparison between LIGA-MEMS and on-chip CMOS capacitors for a VCO application</title><title>Canadian Conference on Electrical and Computer Engineering, 2005</title><addtitle>CCECE</addtitle><description>An integrated voltage-controlled oscillator using TSMC 0.18 mum CMOS technology is presented to demonstrate and compare the phase noise performance between the VCO using a new type of MEMS variable capacitor and that using conventional CMOS varactor, which is built on-chip together with the CMOS VCO. A representative MEMS variable capacitor, fabricated using the LIGA process, has a nominal capacitance of 1.05 pF and exhibits a Q factor of 40.9 at 2.7 GHz. The simulation results show that with this LIGA-MEMS capacitor, a 4.3 dB of phase noise improvement at 300 kHz offset from the carrier is achieved when the VCO operates at 2.7 GHz</description><subject>Capacitance</subject><subject>Capacitors</subject><subject>CMOS technology</subject><subject>Electrodes</subject><subject>Frequency</subject><subject>Micromechanical devices</subject><subject>Phase noise</subject><subject>Q factor</subject><subject>Varactors</subject><subject>Voltage-controlled oscillators</subject><issn>0840-7789</issn><issn>2576-7046</issn><isbn>0780388852</isbn><isbn>9780780388857</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkMtqAjEYRkMvULV9gXaTF4j9k8ltlhKmVlAsKN1KJpNgiiZhZqD07Wupm-9wNmfxIfRMYU4p1K_GNKaZMwAxp0LIWrIbNGFCSaKAy1s0BaWh0loLdocmoDkQpXT9gKbD8AUAXEs-QeHjaAePU46XLb4PuT_b5Dx2-VxsH4eccOvHb-8TXq-WC7JpNjtsU4dzIu4YCzab7Q47W6yLY-4HfClgiz_NFttSTtHZMeb0iO6DPQ3-6coZ2r81e_NO1tvlyizWJNYwElbxVne6Au475YPr2kBlC17aIBj8SQCtKBcu1LwGR9u28kxrYJrJwKGaoZf_bPTeH0ofz7b_OVzvqX4BShNXGw</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Fang, L.</creator><creator>Klymyshyn, D.</creator><creator>Dinh, A.</creator><creator>Haluzan, D.</creator><creator>Achenbach, S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2005</creationdate><title>Phase noise performance comparison between LIGA-MEMS and on-chip CMOS capacitors for a VCO application</title><author>Fang, L. ; Klymyshyn, D. ; Dinh, A. ; Haluzan, D. ; Achenbach, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-234b8d8304ed7efcdbf16b0e6af520bf16f087145cf9490c1bb3e28802826f403</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Capacitance</topic><topic>Capacitors</topic><topic>CMOS technology</topic><topic>Electrodes</topic><topic>Frequency</topic><topic>Micromechanical devices</topic><topic>Phase noise</topic><topic>Q factor</topic><topic>Varactors</topic><topic>Voltage-controlled oscillators</topic><toplevel>online_resources</toplevel><creatorcontrib>Fang, L.</creatorcontrib><creatorcontrib>Klymyshyn, D.</creatorcontrib><creatorcontrib>Dinh, A.</creatorcontrib><creatorcontrib>Haluzan, D.</creatorcontrib><creatorcontrib>Achenbach, S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fang, L.</au><au>Klymyshyn, D.</au><au>Dinh, A.</au><au>Haluzan, D.</au><au>Achenbach, S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Phase noise performance comparison between LIGA-MEMS and on-chip CMOS capacitors for a VCO application</atitle><btitle>Canadian Conference on Electrical and Computer Engineering, 2005</btitle><stitle>CCECE</stitle><date>2005</date><risdate>2005</risdate><spage>425</spage><epage>428</epage><pages>425-428</pages><issn>0840-7789</issn><eissn>2576-7046</eissn><isbn>0780388852</isbn><isbn>9780780388857</isbn><abstract>An integrated voltage-controlled oscillator using TSMC 0.18 mum CMOS technology is presented to demonstrate and compare the phase noise performance between the VCO using a new type of MEMS variable capacitor and that using conventional CMOS varactor, which is built on-chip together with the CMOS VCO. A representative MEMS variable capacitor, fabricated using the LIGA process, has a nominal capacitance of 1.05 pF and exhibits a Q factor of 40.9 at 2.7 GHz. The simulation results show that with this LIGA-MEMS capacitor, a 4.3 dB of phase noise improvement at 300 kHz offset from the carrier is achieved when the VCO operates at 2.7 GHz</abstract><pub>IEEE</pub><doi>10.1109/CCECE.2005.1556962</doi><tpages>4</tpages></addata></record> |
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| ispartof | Canadian Conference on Electrical and Computer Engineering, 2005, 2005, p.425-428 |
| issn | 0840-7789 2576-7046 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Capacitance Capacitors CMOS technology Electrodes Frequency Micromechanical devices Phase noise Q factor Varactors Voltage-controlled oscillators |
| title | Phase noise performance comparison between LIGA-MEMS and on-chip CMOS capacitors for a VCO application |
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