A self-aligned vertical HBT for thin SOI SiGeC BiCMOS

We demonstrate a 4-mask HBT module, which enables the integration of three high performance self-aligned SiGeC HBTs into a 0.13/spl mu/m SOI CMOS technology. Static and dynamic transistor characteristics are described and compared with simulation results and bulk device performances.

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Bibliographische Detailangaben
Hauptverfasser:	Avenier, G., Schwartzmann, T., Chevalier, P., Vandelle, B., Rubaldo, L., Dutartre, D., Boissonnet, L., Saguin, F., Pantel, R., Fregonese, S., Maneux, C., Zimmer, T., Chantre, A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	BiCMOS integrated circuits CMOS process CMOS technology Germanium silicon alloys Heterojunction bipolar transistors Isolation technology Radio frequency Radiofrequency identification Silicon on insulator technology Substrates
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Beschreibung
Zusammenfassung:	We demonstrate a 4-mask HBT module, which enables the integration of three high performance self-aligned SiGeC HBTs into a 0.13/spl mu/m SOI CMOS technology. Static and dynamic transistor characteristics are described and compared with simulation results and bulk device performances.
ISSN:	1088-9299 2378-590X
DOI:	10.1109/BIPOL.2005.1555216