Numerical investigation of the effect of doping profiles on the high frequency performance of InP/InGaAs super scaled HBTs

Our simulations show that the emitter and collector doping profile engineering is very important for the transistor optimization, in particular, adjusting the low doped emitter section to the depletion length resulted in the decrease of the emitter series resistance and increased f/sub t/ and f/sub...

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Hauptverfasser:	Veksler, D., Shur, M.S., Houtsma, V.E., Weimann, N.G., Chen, Y.K.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Analytical models Applied sciences Doping profiles Double heterojunction bipolar transistors Electron emission Electronics Exact sciences and technology Frequency Heterojunction bipolar transistors Indium gallium arsenide Indium phosphide Neodymium Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates Transistors
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