Numerical investigation of the effect of doping profiles on the high frequency performance of InP/InGaAs super scaled HBTs
Our simulations show that the emitter and collector doping profile engineering is very important for the transistor optimization, in particular, adjusting the low doped emitter section to the depletion length resulted in the decrease of the emitter series resistance and increased f/sub t/ and f/sub...
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| creator | Veksler, D. Shur, M.S. Houtsma, V.E. Weimann, N.G. Chen, Y.K. |
| description | Our simulations show that the emitter and collector doping profile engineering is very important for the transistor optimization, in particular, adjusting the low doped emitter section to the depletion length resulted in the decrease of the emitter series resistance and increased f/sub t/ and f/sub max/; decreasing of the collector doping concentration and shrinking the collector thickness reduced the collector transit time. Accounting for the lateral diffusion of hot electrons in the device with submicron emitter was found to be important in the transistor optimization process. This effect determines the effective thickness of the emitter finger and the value of the push-out current. |
| doi_str_mv | 10.1109/LECHPD.2004.1549664 |
| format | Conference Proceeding |
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Accounting for the lateral diffusion of hot electrons in the device with submicron emitter was found to be important in the transistor optimization process. This effect determines the effective thickness of the emitter finger and the value of the push-out current.</description><identifier>ISBN: 9789812561961</identifier><identifier>ISBN: 981256196X</identifier><identifier>DOI: 10.1109/LECHPD.2004.1549664</identifier><language>eng</language><publisher>Singapore: IEEE</publisher><subject>Analytical models ; Applied sciences ; Doping profiles ; Double heterojunction bipolar transistors ; Electron emission ; Electronics ; Exact sciences and technology ; Frequency ; Heterojunction bipolar transistors ; Indium gallium arsenide ; Indium phosphide ; Neodymium ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Substrates ; Transistors</subject><ispartof>Proceedings. 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This effect determines the effective thickness of the emitter finger and the value of the push-out current.</description><subject>Analytical models</subject><subject>Applied sciences</subject><subject>Doping profiles</subject><subject>Double heterojunction bipolar transistors</subject><subject>Electron emission</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Frequency</subject><subject>Heterojunction bipolar transistors</subject><subject>Indium gallium arsenide</subject><subject>Indium phosphide</subject><subject>Neodymium</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. 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IEEE Lester Eastman Conference on High Performance Devices, 2004</btitle><stitle>LECHPD</stitle><date>2004</date><risdate>2004</risdate><spage>8</spage><epage>15</epage><pages>8-15</pages><isbn>9789812561961</isbn><isbn>981256196X</isbn><abstract>Our simulations show that the emitter and collector doping profile engineering is very important for the transistor optimization, in particular, adjusting the low doped emitter section to the depletion length resulted in the decrease of the emitter series resistance and increased f/sub t/ and f/sub max/; decreasing of the collector doping concentration and shrinking the collector thickness reduced the collector transit time. Accounting for the lateral diffusion of hot electrons in the device with submicron emitter was found to be important in the transistor optimization process. 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| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 9789812561961 |
| ispartof | Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004, 2004, p.8-15 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Analytical models Applied sciences Doping profiles Double heterojunction bipolar transistors Electron emission Electronics Exact sciences and technology Frequency Heterojunction bipolar transistors Indium gallium arsenide Indium phosphide Neodymium Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates Transistors |
| title | Numerical investigation of the effect of doping profiles on the high frequency performance of InP/InGaAs super scaled HBTs |
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