Extraction of physical parameters of strained silicon MOSFETs from C-V measurement

This paper presents a methodology for extraction of the physical parameters of strained-silicon MOSFET from one capacitance-voltage (C-V) measurement based on physics-based compact model and conventional C-V characterization techniques. The extracted physical parameters (such as strained-silicon lay...

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Bibliographische Detailangaben

Hauptverfasser:	Chandrasekaran, K., Xing Zhou, Siau Ben Chiah, Wangzuo Shangguan, Guan Huei See, Bera, L.K., Balasubramanian, N., Rustagi, S.C.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitance measurement Capacitance-voltage characteristics CMOS technology Data mining Doping Medical simulation MOSFETs Semiconductor device modeling Semiconductor process modeling Silicon
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