Anomalous charge loss of reference cell in MLC flash memory due to process-induced mobile ion
This paper reports an anomalous charge loss observed from the reference cell of MLC flash memory induced by the cobalt salicide process. The reference cell is shown to exhibit unique retention behavior different from that of the normal array cell. Both the source and mechanism of the enhanced charge...
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| creator | Sang-Pil Sim Wook Hyun Kwon Heon Kyu Lee Jee Hoon Han Seung Boo Jeon Bong Yong Lee Jae Hoon Kim Jung In Han Byoung Moon Yoon Lee, W.H. Chan-Kwang Park Kinam Kim |
| description | This paper reports an anomalous charge loss observed from the reference cell of MLC flash memory induced by the cobalt salicide process. The reference cell is shown to exhibit unique retention behavior different from that of the normal array cell. Both the source and mechanism of the enhanced charge loss therein are investigated through various bake tests, mobile ion analysis, and structural analysis. A simple yet effective way to protect the reference cell from the process-induced mobile ions is proposed. |
| doi_str_mv | 10.1109/ESSDER.2005.1546650 |
| format | Conference Proceeding |
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The reference cell is shown to exhibit unique retention behavior different from that of the normal array cell. Both the source and mechanism of the enhanced charge loss therein are investigated through various bake tests, mobile ion analysis, and structural analysis. A simple yet effective way to protect the reference cell from the process-induced mobile ions is proposed.</description><identifier>ISSN: 1930-8876</identifier><identifier>ISBN: 0780392035</identifier><identifier>ISBN: 9780780392038</identifier><identifier>DOI: 10.1109/ESSDER.2005.1546650</identifier><language>eng</language><publisher>IEEE</publisher><subject>Cobalt ; Consumer electronics ; Flash memory ; Mobile communication ; Moon ; Protection ; Research and development ; Semiconductor memory ; Stability ; Testing</subject><ispartof>Proceedings of 35th European Solid-State Device Research Conference, 2005. 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A simple yet effective way to protect the reference cell from the process-induced mobile ions is proposed.</description><subject>Cobalt</subject><subject>Consumer electronics</subject><subject>Flash memory</subject><subject>Mobile communication</subject><subject>Moon</subject><subject>Protection</subject><subject>Research and development</subject><subject>Semiconductor memory</subject><subject>Stability</subject><subject>Testing</subject><issn>1930-8876</issn><isbn>0780392035</isbn><isbn>9780780392038</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkMtKAzEYRgMqWGufoJv_BaYmk9tkWWq9wIhgdSklk_ljI5lJSdpF396C_TZnd-B8hMwZXTBGzcN6s3lcfyxqSuWCSaGUpFfkjuqGclNTLq_JhBlOq6bR6pbMSvml53GjpFET8r0c02BjOhZwO5t_EGIqBZKHjB4zjg7BYYwQRnhrV-CjLTsYcEj5BP0R4ZBgn5PDUqow9keHPQypCxEhpPGe3HgbC84unJKvp_Xn6qVq359fV8u2CkzLQ2U6JZBJVjvLsdMoEaVVigmqbY0CtaC-7r1H44Ryhvdoreut18jEOYTzKZn_ewMibvc5DDaftpc3-B_DiFUd</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Sang-Pil Sim</creator><creator>Wook Hyun Kwon</creator><creator>Heon Kyu Lee</creator><creator>Jee Hoon Han</creator><creator>Seung Boo Jeon</creator><creator>Bong Yong Lee</creator><creator>Jae Hoon Kim</creator><creator>Jung In Han</creator><creator>Byoung Moon Yoon</creator><creator>Lee, W.H.</creator><creator>Chan-Kwang Park</creator><creator>Kinam Kim</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2005</creationdate><title>Anomalous charge loss of reference cell in MLC flash memory due to process-induced mobile ion</title><author>Sang-Pil Sim ; Wook Hyun Kwon ; Heon Kyu Lee ; Jee Hoon Han ; Seung Boo Jeon ; Bong Yong Lee ; Jae Hoon Kim ; Jung In Han ; Byoung Moon Yoon ; Lee, W.H. ; Chan-Kwang Park ; Kinam Kim</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-9b64e1512ca3eb7e5ee5a661407a2e4e740f2dffe9c46c93deaacdaf7e1439633</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Cobalt</topic><topic>Consumer electronics</topic><topic>Flash memory</topic><topic>Mobile communication</topic><topic>Moon</topic><topic>Protection</topic><topic>Research and development</topic><topic>Semiconductor memory</topic><topic>Stability</topic><topic>Testing</topic><toplevel>online_resources</toplevel><creatorcontrib>Sang-Pil Sim</creatorcontrib><creatorcontrib>Wook Hyun Kwon</creatorcontrib><creatorcontrib>Heon Kyu Lee</creatorcontrib><creatorcontrib>Jee Hoon Han</creatorcontrib><creatorcontrib>Seung Boo Jeon</creatorcontrib><creatorcontrib>Bong Yong Lee</creatorcontrib><creatorcontrib>Jae Hoon Kim</creatorcontrib><creatorcontrib>Jung In Han</creatorcontrib><creatorcontrib>Byoung Moon Yoon</creatorcontrib><creatorcontrib>Lee, W.H.</creatorcontrib><creatorcontrib>Chan-Kwang Park</creatorcontrib><creatorcontrib>Kinam Kim</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sang-Pil Sim</au><au>Wook Hyun Kwon</au><au>Heon Kyu Lee</au><au>Jee Hoon Han</au><au>Seung Boo Jeon</au><au>Bong Yong Lee</au><au>Jae Hoon Kim</au><au>Jung In Han</au><au>Byoung Moon Yoon</au><au>Lee, W.H.</au><au>Chan-Kwang Park</au><au>Kinam Kim</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Anomalous charge loss of reference cell in MLC flash memory due to process-induced mobile ion</atitle><btitle>Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005</btitle><stitle>ESSDERC</stitle><date>2005</date><risdate>2005</risdate><spage>321</spage><epage>324</epage><pages>321-324</pages><issn>1930-8876</issn><isbn>0780392035</isbn><isbn>9780780392038</isbn><abstract>This paper reports an anomalous charge loss observed from the reference cell of MLC flash memory induced by the cobalt salicide process. The reference cell is shown to exhibit unique retention behavior different from that of the normal array cell. Both the source and mechanism of the enhanced charge loss therein are investigated through various bake tests, mobile ion analysis, and structural analysis. A simple yet effective way to protect the reference cell from the process-induced mobile ions is proposed.</abstract><pub>IEEE</pub><doi>10.1109/ESSDER.2005.1546650</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 1930-8876 |
| ispartof | Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005, 2005, p.321-324 |
| issn | 1930-8876 |
| language | eng |
| recordid | cdi_ieee_primary_1546650 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Cobalt Consumer electronics Flash memory Mobile communication Moon Protection Research and development Semiconductor memory Stability Testing |
| title | Anomalous charge loss of reference cell in MLC flash memory due to process-induced mobile ion |
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