The impact of TiN capping Layer on NiSi, CoSi/sub 2/, and Co/sub x/Ni/sub 1-x/Si/sub 2/ FUSI metal gate work function adjustment

The impact of TiN capping layer on dual work functions of Ni, Co, and Co-Ni fully silicided (FUSI) metal gates was investigated. It was found that the TiN capping layer significantly altered the distribution of both n- and p-dopants during the FUSI process, which in turn changed the work functions o...

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Veröffentlicht in:	IEEE transactions on electron devices 2005-12, Vol.52 (12), p.2703-2709
Hauptverfasser:	Liu, Jun, Wen, Huang-Chun, Lu, Jiong-Ping, Kwong, Dim-Lee
Format:	Artikel
Sprache:	eng
Schlagworte:	Boron materials/devices Capping layer Cobalt materials/devices dopant dual work function Electron emission fully silicided (FUSI) metal gate Nickel materials/devices Semiconductor device doping TiN Titanium materials/devices
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