NBTI degradation and its impact for analog circuit reliability

A methodology to quantify the degradation at circuit level due to negative bias temperature instability (NBTI) has been proposed in this work. Using this approach, a variety of analog/mixed-signal circuits are simulated, and their degradation is analyzed. It has been shown that the degradation in ci...

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Veröffentlicht in:	IEEE transactions on electron devices 2005-12, Vol.52 (12), p.2609-2615
Hauptverfasser:	Jha, N.K., Reddy, P.S., Sharma, D.K., Rao, V.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analog circuits Analog integrated circuits Analog/mixed-signal circuits Applied sciences Bias circuit lifetime Circuit properties Circuits Degradation Devices Digital circuits Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Gain Integrated circuit reliability Mixed analog-digital integrated circuits negative bias temperature instability (NBTI) Niobium base alloys pMOSFET degradation Signal convertors Simulation Theoretical study. Circuits analysis and design threshold-voltage shift
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