MMIC-oscillator designs for ultra low phase noise
Various balanced VCO-topologies like cross-connected (negative gm), coupled cross-connected, coupled Colpitt and Clapp oscillators, all with a fully integrated tank are reported. In this study, different MMIC/RFIC technologies such as SiGe HBT, InGaP-GaAs-HBT, PHEMT, MHEMT, and CMOS are represented...
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creator | Zirath, H. Jacobsson, H. Bao, M. Ferndahl, M. Kozhuharov, R. |
description | Various balanced VCO-topologies like cross-connected (negative gm), coupled cross-connected, coupled Colpitt and Clapp oscillators, all with a fully integrated tank are reported. In this study, different MMIC/RFIC technologies such as SiGe HBT, InGaP-GaAs-HBT, PHEMT, MHEMT, and CMOS are represented and parameters such as phase-noise, output power, dc-power consumption, and tuning range are compared. All oscillators are designed for low phase noise. Low phase noise can be achieved by CMOS, PHEMT and MHEMT technologies although SiGe and InGaP-GaAs HBT based oscillators have demonstrated the lowest phase noise. Both fundamental and second harmonic VCOs are represented in the evaluation. |
doi_str_mv | 10.1109/CSICS.2005.1531813 |
format | Conference Proceeding |
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In this study, different MMIC/RFIC technologies such as SiGe HBT, InGaP-GaAs-HBT, PHEMT, MHEMT, and CMOS are represented and parameters such as phase-noise, output power, dc-power consumption, and tuning range are compared. All oscillators are designed for low phase noise. Low phase noise can be achieved by CMOS, PHEMT and MHEMT technologies although SiGe and InGaP-GaAs HBT based oscillators have demonstrated the lowest phase noise. 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Both fundamental and second harmonic VCOs are represented in the evaluation.</description><subject>CMOS technology</subject><subject>Germanium silicon alloys</subject><subject>Heterojunction bipolar transistors</subject><subject>mHEMTs</subject><subject>MMICs</subject><subject>Oscillators</subject><subject>Phase noise</subject><subject>PHEMTs</subject><subject>Radiofrequency integrated circuits</subject><subject>Silicon germanium</subject><issn>1550-8781</issn><issn>2374-8443</issn><isbn>0780392507</isbn><isbn>9780780392502</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8tOwzAURC0eEmnLD8AmP-Bwrx-xs0QRlEitWLT76jpxipFpqjgI8fdEoqs5szmaYewBoUCE6qneNfWuEAC6QC3RorximZBGcauUvGYLMBZkJTSYG5ah1sCtsXjHFil9AsiZTcZwu21qPqQ2xEjTMOadT-F4Snk_83ecRsrj8JOfPyj5_DSE5FfstqeY_P0ll2z_-rKv3_jmfd3UzxseKpi4RuENosGyd6ok1TkgQl1WpOd1wrdKOe10a5RDAcIAOrBATsBcfUdyyR7_tcF7fziP4YvG38PlqfwD0YZEAQ</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Zirath, H.</creator><creator>Jacobsson, H.</creator><creator>Bao, M.</creator><creator>Ferndahl, M.</creator><creator>Kozhuharov, R.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2005</creationdate><title>MMIC-oscillator designs for ultra low phase noise</title><author>Zirath, H. ; Jacobsson, H. ; Bao, M. ; Ferndahl, M. ; Kozhuharov, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-512e711716fb46a4db0aa1569a54432ec44b5b5c74b1202701b080ab20120eda3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>CMOS technology</topic><topic>Germanium silicon alloys</topic><topic>Heterojunction bipolar transistors</topic><topic>mHEMTs</topic><topic>MMICs</topic><topic>Oscillators</topic><topic>Phase noise</topic><topic>PHEMTs</topic><topic>Radiofrequency integrated circuits</topic><topic>Silicon germanium</topic><toplevel>online_resources</toplevel><creatorcontrib>Zirath, H.</creatorcontrib><creatorcontrib>Jacobsson, H.</creatorcontrib><creatorcontrib>Bao, M.</creatorcontrib><creatorcontrib>Ferndahl, M.</creatorcontrib><creatorcontrib>Kozhuharov, R.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zirath, H.</au><au>Jacobsson, H.</au><au>Bao, M.</au><au>Ferndahl, M.</au><au>Kozhuharov, R.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>MMIC-oscillator designs for ultra low phase noise</atitle><btitle>IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05</btitle><stitle>CSICS</stitle><date>2005</date><risdate>2005</risdate><spage>4 pp.</spage><pages>4 pp.-</pages><issn>1550-8781</issn><eissn>2374-8443</eissn><isbn>0780392507</isbn><isbn>9780780392502</isbn><abstract>Various balanced VCO-topologies like cross-connected (negative gm), coupled cross-connected, coupled Colpitt and Clapp oscillators, all with a fully integrated tank are reported. In this study, different MMIC/RFIC technologies such as SiGe HBT, InGaP-GaAs-HBT, PHEMT, MHEMT, and CMOS are represented and parameters such as phase-noise, output power, dc-power consumption, and tuning range are compared. All oscillators are designed for low phase noise. Low phase noise can be achieved by CMOS, PHEMT and MHEMT technologies although SiGe and InGaP-GaAs HBT based oscillators have demonstrated the lowest phase noise. 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subjects | CMOS technology Germanium silicon alloys Heterojunction bipolar transistors mHEMTs MMICs Oscillators Phase noise PHEMTs Radiofrequency integrated circuits Silicon germanium |
title | MMIC-oscillator designs for ultra low phase noise |
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