IGBT and PN junction diode loss modeling for system simulations

An accurate and numerically efficient method of calculating semiconductor losses in drive systems is set forth. In the proposed approach, switching events are modeled by idealized voltage and current waveforms that yield the appropriate switching energy loss. The waveforms are specifically designed...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Cassimere, B., Sudhoff, S.D., Aliprantis, D.C., Swinney, M.D.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Computational efficiency Computational modeling Insulated gate bipolar transistors Inverters Power system modeling Semiconductor diodes Switching frequency Switching loss Time domain analysis Voltage
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!