Thermal hillocks on half-micron aluminum lines: the next reliability issue?
Thermally induced Al hillocks cause manufacturing and reliability problems in integrated devices. These thermal hillocks, which form during the sinter process, interfere with the uniformity of subsequent spin-on materials (e.g. photoresist) and can create pinholes susceptible to corrosion or electri...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 257 |
|---|---|
| container_issue | |
| container_start_page | 256 |
| container_title | |
| container_volume | |
| creator | Pico, C.A. Bonifield, T.D. |
| description | Thermally induced Al hillocks cause manufacturing and reliability problems in integrated devices. These thermal hillocks, which form during the sinter process, interfere with the uniformity of subsequent spin-on materials (e.g. photoresist) and can create pinholes susceptible to corrosion or electrical breakdown. Thermal hillocks have both lateral and vertical dimensions on the order of 1 mu m. The authors find that thermal hillocks are present on lines having linewidths greater than 3 mu m, absent on lines having linewidths between 0.8 mu m and 3 mu m, and, again, present on lines having linewidths of 0.6 mu m. These last hillocks are defined as line hillocks to distinguish them from hillocks occurring in the wider areas.< > |
| doi_str_mv | 10.1109/VMIC.1991.152996 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_152996</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>152996</ieee_id><sourcerecordid>152996</sourcerecordid><originalsourceid>FETCH-LOGICAL-i89t-4f00043d2a4a09b1d38eca57511b7e9dac9985200e7a1e5fdf38259ef4e2684e3</originalsourceid><addsrcrecordid>eNotj0tLw0AUhQdEUGv34mr-QOI8k7luRIqPYsVNEHdlktwhVyepZBKw_95KPZvzrc7HYexKilxKATfvr-tVLgFkLq0CKE7YhXAlGFWU-uOMLVP6FIcYK7XS5-yl6nDsfeQdxbhrvhLfDbzzMWQ9NeOBfZx7GuaeRxow3fKpQz7gz8RHjORrijTtOaU0490lOw0-Jlz-94JVjw_V6jnbvD2tV_ebjBxMmQl_et0qb7yAWrbaYeNtaaWsS4TWNwDOKiGw9BJtaIN2ygIGg6pwBvWCXR9nCRG33yP1ftxvj2_1LxuXS3M</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Thermal hillocks on half-micron aluminum lines: the next reliability issue?</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Pico, C.A. ; Bonifield, T.D.</creator><creatorcontrib>Pico, C.A. ; Bonifield, T.D.</creatorcontrib><description>Thermally induced Al hillocks cause manufacturing and reliability problems in integrated devices. These thermal hillocks, which form during the sinter process, interfere with the uniformity of subsequent spin-on materials (e.g. photoresist) and can create pinholes susceptible to corrosion or electrical breakdown. Thermal hillocks have both lateral and vertical dimensions on the order of 1 mu m. The authors find that thermal hillocks are present on lines having linewidths greater than 3 mu m, absent on lines having linewidths between 0.8 mu m and 3 mu m, and, again, present on lines having linewidths of 0.6 mu m. These last hillocks are defined as line hillocks to distinguish them from hillocks occurring in the wider areas.< ></description><identifier>ISBN: 087942673X</identifier><identifier>ISBN: 9780879426736</identifier><identifier>DOI: 10.1109/VMIC.1991.152996</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum ; Computer science ; Frequency ; Grain boundaries ; Grain size ; Instruments ; Metallization ; Reliability engineering ; Resists ; Scanning electron microscopy</subject><ispartof>1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference, 1991, p.256-257</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/152996$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/152996$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Pico, C.A.</creatorcontrib><creatorcontrib>Bonifield, T.D.</creatorcontrib><title>Thermal hillocks on half-micron aluminum lines: the next reliability issue?</title><title>1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference</title><addtitle>VMIC</addtitle><description>Thermally induced Al hillocks cause manufacturing and reliability problems in integrated devices. These thermal hillocks, which form during the sinter process, interfere with the uniformity of subsequent spin-on materials (e.g. photoresist) and can create pinholes susceptible to corrosion or electrical breakdown. Thermal hillocks have both lateral and vertical dimensions on the order of 1 mu m. The authors find that thermal hillocks are present on lines having linewidths greater than 3 mu m, absent on lines having linewidths between 0.8 mu m and 3 mu m, and, again, present on lines having linewidths of 0.6 mu m. These last hillocks are defined as line hillocks to distinguish them from hillocks occurring in the wider areas.< ></description><subject>Aluminum</subject><subject>Computer science</subject><subject>Frequency</subject><subject>Grain boundaries</subject><subject>Grain size</subject><subject>Instruments</subject><subject>Metallization</subject><subject>Reliability engineering</subject><subject>Resists</subject><subject>Scanning electron microscopy</subject><isbn>087942673X</isbn><isbn>9780879426736</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1991</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj0tLw0AUhQdEUGv34mr-QOI8k7luRIqPYsVNEHdlktwhVyepZBKw_95KPZvzrc7HYexKilxKATfvr-tVLgFkLq0CKE7YhXAlGFWU-uOMLVP6FIcYK7XS5-yl6nDsfeQdxbhrvhLfDbzzMWQ9NeOBfZx7GuaeRxow3fKpQz7gz8RHjORrijTtOaU0490lOw0-Jlz-94JVjw_V6jnbvD2tV_ebjBxMmQl_et0qb7yAWrbaYeNtaaWsS4TWNwDOKiGw9BJtaIN2ygIGg6pwBvWCXR9nCRG33yP1ftxvj2_1LxuXS3M</recordid><startdate>1991</startdate><enddate>1991</enddate><creator>Pico, C.A.</creator><creator>Bonifield, T.D.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1991</creationdate><title>Thermal hillocks on half-micron aluminum lines: the next reliability issue?</title><author>Pico, C.A. ; Bonifield, T.D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i89t-4f00043d2a4a09b1d38eca57511b7e9dac9985200e7a1e5fdf38259ef4e2684e3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Aluminum</topic><topic>Computer science</topic><topic>Frequency</topic><topic>Grain boundaries</topic><topic>Grain size</topic><topic>Instruments</topic><topic>Metallization</topic><topic>Reliability engineering</topic><topic>Resists</topic><topic>Scanning electron microscopy</topic><toplevel>online_resources</toplevel><creatorcontrib>Pico, C.A.</creatorcontrib><creatorcontrib>Bonifield, T.D.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Pico, C.A.</au><au>Bonifield, T.D.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Thermal hillocks on half-micron aluminum lines: the next reliability issue?</atitle><btitle>1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference</btitle><stitle>VMIC</stitle><date>1991</date><risdate>1991</risdate><spage>256</spage><epage>257</epage><pages>256-257</pages><isbn>087942673X</isbn><isbn>9780879426736</isbn><abstract>Thermally induced Al hillocks cause manufacturing and reliability problems in integrated devices. These thermal hillocks, which form during the sinter process, interfere with the uniformity of subsequent spin-on materials (e.g. photoresist) and can create pinholes susceptible to corrosion or electrical breakdown. Thermal hillocks have both lateral and vertical dimensions on the order of 1 mu m. The authors find that thermal hillocks are present on lines having linewidths greater than 3 mu m, absent on lines having linewidths between 0.8 mu m and 3 mu m, and, again, present on lines having linewidths of 0.6 mu m. These last hillocks are defined as line hillocks to distinguish them from hillocks occurring in the wider areas.< ></abstract><pub>IEEE</pub><doi>10.1109/VMIC.1991.152996</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 087942673X |
| ispartof | 1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference, 1991, p.256-257 |
| issn | |
| language | eng |
| recordid | cdi_ieee_primary_152996 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Aluminum Computer science Frequency Grain boundaries Grain size Instruments Metallization Reliability engineering Resists Scanning electron microscopy |
| title | Thermal hillocks on half-micron aluminum lines: the next reliability issue? |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-11T20%3A14%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Thermal%20hillocks%20on%20half-micron%20aluminum%20lines:%20the%20next%20reliability%20issue?&rft.btitle=1991%20Proceedings%20Eighth%20International%20IEEE%20VLSI%20Multilevel%20Interconnection%20Conference&rft.au=Pico,%20C.A.&rft.date=1991&rft.spage=256&rft.epage=257&rft.pages=256-257&rft.isbn=087942673X&rft.isbn_list=9780879426736&rft_id=info:doi/10.1109/VMIC.1991.152996&rft_dat=%3Cieee_6IE%3E152996%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=152996&rfr_iscdi=true |