Prediction of harmonic tuning performance in pHEMTs
This paper focuses on the characterization and optimization of microwave power transistors using a commercial on-wafer harmonic load pull system. Specific attention is paid to the output tuning of the second harmonic impedance presented to the device. The ability to quantify the level of accuracy in...
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| creator | Varanasi, R.K. Baylis, C.P. Dunleavy, L.P. Clausen, W. |
| description | This paper focuses on the characterization and optimization of microwave power transistors using a commercial on-wafer harmonic load pull system. Specific attention is paid to the output tuning of the second harmonic impedance presented to the device. The ability to quantify the level of accuracy in a load pull system is explored by using various calibration validation methods. Experiments and simulation comparisons are described for a GaAs pHEMT and a GaAs HJFET. The measured harmonic load pull data pointed to different guidance on how one would match the 2/sup nd/ harmonic for best performance. |
| doi_str_mv | 10.1109/WAMIC.2005.1528372 |
| format | Conference Proceeding |
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Specific attention is paid to the output tuning of the second harmonic impedance presented to the device. The ability to quantify the level of accuracy in a load pull system is explored by using various calibration validation methods. Experiments and simulation comparisons are described for a GaAs pHEMT and a GaAs HJFET. The measured harmonic load pull data pointed to different guidance on how one would match the 2/sup nd/ harmonic for best performance.</description><identifier>ISBN: 9780780388611</identifier><identifier>ISBN: 0780388615</identifier><identifier>DOI: 10.1109/WAMIC.2005.1528372</identifier><language>eng</language><publisher>IEEE</publisher><subject>Calibration ; Gallium arsenide ; Impedance ; Microwave devices ; PHEMTs ; Postal services ; Power system modeling ; Power transistors</subject><ispartof>The 2005 IEEE Annual Conference Wireless and Micrwave Technology, 2005, 2005, p.4 pp.</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1528372$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1528372$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Varanasi, R.K.</creatorcontrib><creatorcontrib>Baylis, C.P.</creatorcontrib><creatorcontrib>Dunleavy, L.P.</creatorcontrib><creatorcontrib>Clausen, W.</creatorcontrib><title>Prediction of harmonic tuning performance in pHEMTs</title><title>The 2005 IEEE Annual Conference Wireless and Micrwave Technology, 2005</title><addtitle>WAMIC</addtitle><description>This paper focuses on the characterization and optimization of microwave power transistors using a commercial on-wafer harmonic load pull system. Specific attention is paid to the output tuning of the second harmonic impedance presented to the device. The ability to quantify the level of accuracy in a load pull system is explored by using various calibration validation methods. Experiments and simulation comparisons are described for a GaAs pHEMT and a GaAs HJFET. The measured harmonic load pull data pointed to different guidance on how one would match the 2/sup nd/ harmonic for best performance.</description><subject>Calibration</subject><subject>Gallium arsenide</subject><subject>Impedance</subject><subject>Microwave devices</subject><subject>PHEMTs</subject><subject>Postal services</subject><subject>Power system modeling</subject><subject>Power transistors</subject><isbn>9780780388611</isbn><isbn>0780388615</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj9FKwzAUhgMiKLMvoDd5gdacnqZJLkeZbrAxLwpejjQ50YhNSzovfHsH7ueD7-6Dn7FHEBWAMM_v68Ouq2ohZAWy1qjqG1YYpcUF1LoFuGPFsnyJy9C0ysh7hm-ZfHTnOCU-Bf5p8zil6Pj5J8X0wWfKYcqjTY54THzebg798sBug_1eqLh6xfqXTd9ty_3xddet92Vsm7ocFArlQPowUGOk9S1Yqb02CF56QnRShoYCYeMAgtEOZQNaKvRBDFbhij39ZyMRneYcR5t_T9dn-Ac8YkNF</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Varanasi, R.K.</creator><creator>Baylis, C.P.</creator><creator>Dunleavy, L.P.</creator><creator>Clausen, W.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2005</creationdate><title>Prediction of harmonic tuning performance in pHEMTs</title><author>Varanasi, R.K. ; Baylis, C.P. ; Dunleavy, L.P. ; Clausen, W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i642-b7307c15dfbe495ad61a58d8931d5de33c55f4efe34c11f98c35418573df0ba73</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Calibration</topic><topic>Gallium arsenide</topic><topic>Impedance</topic><topic>Microwave devices</topic><topic>PHEMTs</topic><topic>Postal services</topic><topic>Power system modeling</topic><topic>Power transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Varanasi, R.K.</creatorcontrib><creatorcontrib>Baylis, C.P.</creatorcontrib><creatorcontrib>Dunleavy, L.P.</creatorcontrib><creatorcontrib>Clausen, W.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Varanasi, R.K.</au><au>Baylis, C.P.</au><au>Dunleavy, L.P.</au><au>Clausen, W.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Prediction of harmonic tuning performance in pHEMTs</atitle><btitle>The 2005 IEEE Annual Conference Wireless and Micrwave Technology, 2005</btitle><stitle>WAMIC</stitle><date>2005</date><risdate>2005</risdate><spage>4 pp.</spage><pages>4 pp.-</pages><isbn>9780780388611</isbn><isbn>0780388615</isbn><abstract>This paper focuses on the characterization and optimization of microwave power transistors using a commercial on-wafer harmonic load pull system. Specific attention is paid to the output tuning of the second harmonic impedance presented to the device. The ability to quantify the level of accuracy in a load pull system is explored by using various calibration validation methods. Experiments and simulation comparisons are described for a GaAs pHEMT and a GaAs HJFET. The measured harmonic load pull data pointed to different guidance on how one would match the 2/sup nd/ harmonic for best performance.</abstract><pub>IEEE</pub><doi>10.1109/WAMIC.2005.1528372</doi><oa>free_for_read</oa></addata></record> |
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| identifier | ISBN: 9780780388611 |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Calibration Gallium arsenide Impedance Microwave devices PHEMTs Postal services Power system modeling Power transistors |
| title | Prediction of harmonic tuning performance in pHEMTs |
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